PHOTOELECTRIC CONVERISON ELEMENT, PHOTOELECTRIC CONVERSION CIRCUIT, AND DISPLAY DEVICE
First Claim
1. A photoelectric conversion element comprising:
- a first gate electrode;
a first gate insulating layer over the first gate electrode;
a crystalline semiconductor layer provided over the first gate insulating layer;
amorphous semiconductor layers provided apart from each other, each of the amorphous semiconductor layers being on and in contact with the crystalline semiconductor layer;
impurity semiconductor layers provided over the amorphous semiconductor layers, respectively;
a source electrode and a drain electrode, each provided in contact with one of the impurity semiconductor layers;
a second gate insulating layer provided to cover a portion of the crystalline semiconductor layer, where the amorphous semiconductor layers are not provided; and
a second gate electrode provided over the second gate insulating layer,wherein a light-receiving portion is provided in the portion of the crystalline semiconductor layer, where the amorphous semiconductor layers are not provided,wherein the first gate electrode includes a light-shielding material and is provided to entirely overlap with the crystalline semiconductor layer and the amorphous semiconductor layers,wherein the second gate electrode includes a light-transmitting material and is provided to overlap with the light-receiving portion, andwherein the first gate electrode is electrically connected to one of the source electrode and the drain electrode.
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Accused Products
Abstract
A photoelectric conversion element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer, an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a light-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.
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Citations
13 Claims
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1. A photoelectric conversion element comprising:
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a first gate electrode; a first gate insulating layer over the first gate electrode; a crystalline semiconductor layer provided over the first gate insulating layer; amorphous semiconductor layers provided apart from each other, each of the amorphous semiconductor layers being on and in contact with the crystalline semiconductor layer; impurity semiconductor layers provided over the amorphous semiconductor layers, respectively; a source electrode and a drain electrode, each provided in contact with one of the impurity semiconductor layers; a second gate insulating layer provided to cover a portion of the crystalline semiconductor layer, where the amorphous semiconductor layers are not provided; and a second gate electrode provided over the second gate insulating layer, wherein a light-receiving portion is provided in the portion of the crystalline semiconductor layer, where the amorphous semiconductor layers are not provided, wherein the first gate electrode includes a light-shielding material and is provided to entirely overlap with the crystalline semiconductor layer and the amorphous semiconductor layers, wherein the second gate electrode includes a light-transmitting material and is provided to overlap with the light-receiving portion, and wherein the first gate electrode is electrically connected to one of the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a photoelectric conversion element comprising steps of:
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forming a first conductive layer over a substrate; forming a first insulating layer over the first gate electrode; forming a crystalline semiconductor film provided over the first insulating layer; forming an amorphous semiconductor film on the crystalline semiconductor film; forming an impurity semiconductor film on the amorphous semiconductor film; forming a thin film layered body by etching the crystalline semiconductor film, the amorphous semiconductor film, and the impurity semiconductor film; forming a second conductive layer over the thin film layered body and the first insulating layer; forming an opening in the thin film layered body and source and drain electrodes by etching an upper portion of the thin film layered body and the second conductive layer; forming a second insulating layer over the opening in the thin film layered body and the source and drain electrodes; and forming a third conductive layer over the opening with the second insulating layer interposed therebetween. - View Dependent Claims (11, 12, 13)
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Specification