OPTOELECTRONIC ELEMENT AND MANUFACTURING METHOD THEREOF

• US 20130313594A1
• Filed: 05/02/2013
• Published: 11/28/2013
• Est. Priority Date: 07/04/2003
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: HAN, Cheng-Nan, Lee, Tsung-Xian, Hsieh, Min-Hsun, Liu, Hsin-Mao, Tao, Ching-San, Chen, Tzer-Perng, Wu, Jen-Chau, Wang, Chih-Ming, Chen, Hung-Hsuan, Chen, Hsing-Chao, Ni, Chih-Peng, Sano, Masafumi
• Granted Patent: US 9,142,740 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/9222 Sequential connecting processes
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/005 relating to encapsulations
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/647 : the elements conducting electric current to or from the semiconductor body

Abstract

An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.

Claims

1. An optoelectronic element, comprising:

an optoelectronic unit comprising a first top surface and a first metal layer on the first top surface;

a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and

a first contact layer on the first transparent structure, comprising a connective part electrically connected with the first metal layer.

2. The optoelectronic element of claim 1, further comprising:

a first conductive layer on the first contact layer; and

an optical layer between the first contact layer and the first conductive layer.

3. The optoelectronic element of claim 1, further comprising a first isolating layer on the first contact layer, wherein the first isolating layer is an optical layer.

4. The optoelectronic element of claim 1, further comprising a second metal layer on the first top surface, wherein the second metal layer is separated from the first metal layer.

5. The optoelectronic element of claim 4, further comprising:

a second conductive layer on the second metal layer; and

an optical layer between the second metal layer and the second conductive layer.

6. The optoelectronic element of claim 4, further comprising:

a second contact layer on the second metal layer; and

a first isolating layer on the second contact layer, wherein the first isolating layer is an optical layer.

7. An optoelectronic element, comprising:

an optoelectronic unit comprising a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface, wherein the optoelectronic unit generates a light;

a first transparent structure covering the lateral surface and exposing the first top surface;

an optical layer on the first top surface and the first transparent structure, diffusing the light;

a first opening through the optical layer; and

a first conductive layer on the optical layer.

8. The optoelectronic element of claim 7, wherein the first conductive layer comprises:

a first plug region above the first metal layer; and

a first extended region overlapping the optical layer,

wherein a distance between the first plug region and the first top surface is smaller than that between the first extended region and the first top surface.

9. The optoelectronic element of claim 7, wherein the first conductive layer comprises a first plug region above the first metal layer, wherein a distance between the first plug region and the first top surface is smaller than that between the top surface of the optical layer and the first top surface.

10. The optoelectronic element of claim 7, further comprising a recess between the optical layer and the first metal layer, wherein the first conductive layer fills the recess.

11. An optoelectronic element, comprising:

an optoelectronic unit comprising a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface;

a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit;

a second transparent structure on the first transparent structure;

a first insulating layer on the first top surface and the first transparent structure;

a first opening through the first insulating layer; and

a first conductive layer on the first insulating layer and electrically connecting to the optoelectronic unit via the first opening.

12. The optoelectronic element of claim 11, further comprising a wavelength-converting layer covering the first transparent structure and the second transparent structure.

13. The optoelectronic element of claim 12, wherein a sidewall of the first transparent structure or the second transparent structure is inclined.

14. The optoelectronic element of claim 12, further comprising a third transparent structure on the wavelength-converting layer.

15. The optoelectronic element of claim 14, wherein the third transparent structure comprises an encapsulating part fully covering the wavelength-converting layer.

16. The optoelectronic element of claim 14, wherein refractive indices of the first transparent structure, the second transparent structure, and the third transparent structure are gradually changed.

17. The optoelectronic element of claim 14, wherein the third transparent structure comprises a trapezoid transparent carrier on the wavelength-converting layer.

18. The optoelectronic element of claim 15, wherein the encapsulating part comprises a dome shape.