HIGH STRENGTH CARBON FIBER COMPOSITE WAFERS FOR MICROFABRICATION
First Claim
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1. A wafer comprising:
- a. at least one sheet of carbon fiber composite (CFC) including carbon fibers embedded in a matrix;
b. a wafer thickness of between 10-500 micrometers;
c. at least one side of the wafer having a root mean square surface roughness Rq of less than 300 nm in an area of 100 micrometers by 100 micrometers and less than 500 nm along a line of 2 millimeter length;
d. a yield strength at fracture of greater than 0.5 gigapascals (GPa), wherein yield strength is defined as a force, in a direction parallel with a plane of a side of the wafer, per unit area, to cause the wafer to fracture; and
e. a strain at fracture of more than 0.01, wherein strain is defined as the change in length caused by a force in a direction parallel with a plane of the wafer divided by original length.
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Abstract
A high strength carbon fiber composite (CFC) wafer, and method of making such wafer, with low surface roughness comprising at least one sheet of CFC including carbon fibers embedded in a matrix. The wafer can have a thickness of between 10-500 micrometers. The wafer can have a root mean square surface roughness Rq, on at least one side, of less than 300 nm in an area of 100 micrometers by 100 micrometers and less than 500 nm along a line of 2 millimeter length. The wafer may be cut to form x-ray window support structures, MEMS, or other micrometer sized structures.
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Citations
20 Claims
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1. A wafer comprising:
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a. at least one sheet of carbon fiber composite (CFC) including carbon fibers embedded in a matrix; b. a wafer thickness of between 10-500 micrometers; c. at least one side of the wafer having a root mean square surface roughness Rq of less than 300 nm in an area of 100 micrometers by 100 micrometers and less than 500 nm along a line of 2 millimeter length; d. a yield strength at fracture of greater than 0.5 gigapascals (GPa), wherein yield strength is defined as a force, in a direction parallel with a plane of a side of the wafer, per unit area, to cause the wafer to fracture; and e. a strain at fracture of more than 0.01, wherein strain is defined as the change in length caused by a force in a direction parallel with a plane of the wafer divided by original length. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An x-ray window comprising:
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a. a support frame defining a perimeter and an aperture; b. a plurality of ribs extending across the aperture of the support frame and carried by the support frame; c. openings between the plurality of ribs; d. the support frame and the plurality of ribs comprising a support structure; e. the support structure comprising a carbon fiber composite (CFC) material, the CFC material comprising carbon fibers embedded in a matrix; f. the support structure having a thickness of between 10-500 micrometers; g. a film disposed over, carried by, and spanning the plurality of ribs and disposed over and spanning the openings, and configured to pass x-ray radiation therethrough; and h. a surface of the support structure facing the film having a root mean square surface roughness Rq of less than 500 nm along a line of 2 millimeter length. - View Dependent Claims (19, 20)
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Specification