EPITAXIAL FORMATION SUPPORT STRUCTURES AND ASSOCIATED METHODS
First Claim
1. An apparatus for forming epitaxial formation support substrates, comprising:
- a first reference plate having a first surface and a second surface opposite the first surface, the first surface including a first formation portion; and
a second reference plate having a first surface and a second surface opposite the first surface, the second surface including a second formation portion, wherein the first and second formation portions of the first and second reference plates face each other, the first formation portion being configured to define a first surface of an uncured support substrate during a firing process and the second formation portion being configured to define a second surface of the uncured support substrate, wherein the uncured support substrate has a coefficient of thermal expansion (CTE) substantially similar to that of N-type gallium nitride (GaN).
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Accused Products
Abstract
Epitaxial formation support structures and associated methods of manufacturing epitaxial formation support structures and solid state lighting devices are disclosed herein. In several embodiments, a method of manufacturing an epitaxial formation support substrate can include forming an uncured support substrate that has a first side, a second side opposite the first side, and coefficient of thermal expansion substantially similar to N-type gallium nitride. The method can further include positioning the first side of the uncured support substrate on a first surface of a first reference plate and positioning a second surface of a second reference plate on the second side to form a stack. The first and second surfaces can include uniformly flat portions. The method can also include firing the stack to sinter the uncured support substrate. At least side of the support substrate can form a planar surface that is substantially uniformly flat.
9 Citations
9 Claims
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1. An apparatus for forming epitaxial formation support substrates, comprising:
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a first reference plate having a first surface and a second surface opposite the first surface, the first surface including a first formation portion; and a second reference plate having a first surface and a second surface opposite the first surface, the second surface including a second formation portion, wherein the first and second formation portions of the first and second reference plates face each other, the first formation portion being configured to define a first surface of an uncured support substrate during a firing process and the second formation portion being configured to define a second surface of the uncured support substrate, wherein the uncured support substrate has a coefficient of thermal expansion (CTE) substantially similar to that of N-type gallium nitride (GaN). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification