Silicon Carbide Krupps Cut Gemstone

• US 20130319045A1
• Filed: 05/29/2012
• Published: 12/05/2013
• Est. Priority Date: 05/29/2012
• Status: Abandoned Application

• Current Assignee: Better Than Diamond, Inc.
• Original Assignee: Better Than Diamond, Inc.
• Inventors: Ritchie, Anthony
• Application Number:
  US13/482,198
• Publication Number:
  US 20130319045A1
• Time in Patent Office: Days
• US Class Current: 63/32
• CPC Class Codes: A44C 17/001 Faceting gems

Abstract

The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) Krupps cut gemstone.

Claims

1. An SiC gemstone, comprising:

a crown portion comprising;

a plurality of crown width tier one facets cut at an angle of approximately 39.2 degrees;

a plurality of crown width tier two facets cut at an angle of approximately 29.6 degrees;

a plurality of crown main facets tier three cut at an angle of approximately 19.7 degrees;

a plurality of crown length tier one facets cut at an angle of approximately 39.2 degrees;

a plurality of crown length tier two facets cut at an angle of approximately 29.6 degrees;

a plurality of crown length facets tier three cut at an angle of approximately 19.7 degrees;

a plurality of crown corner tier one facets cut at an angle of approximately 35.8 degrees;

a plurality of crown corner tier two facets cut at an angle of approximately 26.7 degrees;

a plurality of crown corner tier three facets cut at an angle of approximately 17.6 degrees;

a pavilion portion comprising;

a plurality of pavilion width one facets cut at an angle of approximately 55.0 degrees;

a plurality of pavilion width two facets cut at an angle of approximately 44.0 degrees;

a plurality of pavilion width three facets cut at an angle of approximately 42.5 degrees;

a plurality of pavilion width four facets cut at an angle of approximately 38.5 degrees;

a plurality of pavilion length one facets cut at an angle of approximately 55.0 degrees;

a plurality of pavilion length two facets cut at an angle of approximately 44.0 degrees;

a plurality of pavilion length three facets cut at an angle of approximately 42.5 degrees;

a plurality of pavilion length four facets cut at an angle of approximately 38.5 degrees;

a plurality of pavilion corner tier one facets cut at an angle of approximately 51.6 degrees;

a plurality of pavilion corner tier two facets cut at an angle of approximately 40.5 degrees;

a plurality of pavilion corner tier three facets cut at an angle of approximately 39.0 degrees;

a plurality of pavilion corner tier four facets cut at an angle of approximately 35.1 degrees;

a girdle portion abutting the crown portion and extending along a predetermined plane.

2. The SiC gemstone of claim 1 wherein there are two crown width tier one facets.

3. The SiC gemstone of claim 1 wherein there are four crown corner tier one facets.

4. The SiC gemstone of claim 1 wherein there are two crown length tier one facets.

5. The SiC gemstone of claim 1 wherein there are four crown corner tier two facets.

6. The SiC gemstone of claim 1 wherein there are two pavilion width tier one facets.

7. The SiC gemstone of claim 1 wherein there are two pavilion length tier one facets.

8. The SiC gemstone of claim 1 wherein there are four pavilion corner tier one facets.

9. The SiC gemstone of claim 1 wherein there are four pavilion corner tier two facets.

10. The SiC gemstone of claim 1 wherein there are four pavilion corner tier three facets.

11. The SiC gemstone of claim 1 wherein the SiC is selected from a group comprising 6H, 4H, and 3C SiC.

12. A method of cutting an SiC gemstone, comprising:

cutting a girdle outline of the SiC gemstone;

cutting a width tier one facet on a pavilion side of the SiC gemstone at an angle of approximately 55.0 degrees;

cutting a width tier two facet on the pavilion side of the SiC gemstone at an angle of approximately 44.0 degrees;

cutting a width tier three facet on the pavilion side of the SiC gemstone at an angle of approximately 42.5 degrees;

cutting a width tier four facet on the pavilion side of the SiC gemstone at an angle of approximately 38.5 degrees;

cutting a length tier one facet on a pavilion side of the SiC gemstone at an angle of approximately 55.0 degrees;

cutting a length tier two facet on the pavilion side of the SiC gemstone at an angle of approximately 44.0 degrees;

cutting a length tier three facet on the pavilion side of the SiC gemstone at an angle of approximately 42.5 degrees;

cutting a length tier four facet on the pavilion side of the SiC gemstone at an angle of approximately 38.5 degrees;

cutting a corner tier one facet on the pavilion side of the SiC gemstone at an angle of approximately 51.6 degrees;

cutting a corner tier two facet on the pavilion side of the SiC gemstone at an angle of approximately 40.5 degrees;

cutting a corner tier three facet on the pavilion side of the SiC gemstone at an angle of approximately 39.0 degrees;

cutting a corner tier four facet on the pavilion side of the SiC gemstone at an angle of approximately 35.1 degrees;

cutting a width tier one facet on the crown side of the SiC gemstone at an angle of approximately 39.2 degrees;

cutting a main tier two facet on the crown side of the SiC gemstone at an angle of approximately 29.6 degrees;

cutting a main tier three facet on the crown side of the SiC gemstone at an angle of approximately 19.7 degrees;

cutting a length tier one facet on the crown side of the SiC gemstone at an angle of approximately 39.2 degrees;

cutting a length tier two facet on the crown side of the SiC gemstone at an angle of approximately 29.6 degrees;

cutting a length tier three facet on the crown side of the SiC gemstone at an angle of approximately 19.7 degrees;

cutting a corner tier one facet on the crown side of the SiC gemstone at an angle of approximately 35.8 degrees;

cutting a corner tier two facet on the crown side of the SiC gemstone at an angle of approximately 26.7 degrees; and

cutting a corner tier three facet on the crown side of the SiC gemstone at an angle of approximately 17.6 degrees.

13. The method of claim 12 wherein the cutting is performed by a robotic cutting machine.

14. The method of claim 12 further comprising polishing the facets on the crown side of the SiC gemstone.

15. The method of claim 12 further comprising polishing the facets on the pavilion side of the SiC gemstone.