SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20130320382A1
• Filed: 08/07/2013
• Published: 12/05/2013
• Est. Priority Date: 05/17/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kojima, Akihiro, Sugizaki, Yoshiaki, Akimoto, Yosuke, Fujii, Takayoshi, Shimojuku, Miyuki
• Granted Patent: US 9,006,766 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an inorganic insulating film, a p-side interconnection portion, an n-side interconnection portion, and an organic insulating film. The organic insulating film is provided on the inorganic insulating film, at least on a portion between the p-side interconnection portion and the n-side interconnection portion. An end portion of the p-side interconnection portion on the n-side interconnection portion side and an end portion of the n-side interconnection portion on the p-side interconnection portion side override the organic insulating film.

Claims

1. A semiconductor light emitting device comprising:

a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer;

a p-side electrode provided on a region including the light emitting layer on the second surface;

an n-side electrode provided on a region not including the light emitting layer on the second surface;

an inorganic insulating film provided on the second surface side and including a first via penetrated to the p-side electrode and a second via penetrated to the n-side electrode;

a p-side interconnection portion provided on the inorganic insulating film and electrically connected to the p-side electrode through the first via;

an n-side interconnection portion provided on the inorganic insulating film, spaced from the p-side interconnection portion, and electrically connected to the n-side electrode through the second via; and

an organic insulating film provided on the inorganic insulating film, at least on a portion between the p-side interconnection portion and the n-side interconnection portion,

an end portion of the p-side interconnection portion on the n-side interconnection portion side and an end portion of the n-side interconnection portion on the p-side interconnection portion side overriding the organic insulating film.

2. The device of claim 1, wherein

a step is formed between the inorganic insulating film and the organic insulating film, and

the p-side interconnection portion and the n-side interconnection portion cover the step.

3. The device of claim 1, wherein the organic insulating film is provided also between another end portion of the p-side interconnection portion different from the end portion on the n-side interconnection portion side and the inorganic insulating film, and between another end portion of the n-side interconnection portion different from the end portion on the p-side interconnection portion side and the inorganic insulating film.

4. The device of claim 1, wherein part of the n-side interconnection portion overlaps the inorganic insulating film on the region including the light emitting layer.

5. The device of claim 1, wherein area of the n-side interconnection portion spread on the inorganic insulating film is larger than area of the n-side interconnection portion connected to the n-side electrode through the second via.

6. The device of claim 1, wherein

the p-side interconnection portion includes a p-side external terminal exposed from the inorganic insulating film and the organic insulating film, and

the n-side interconnection portion includes an n-side external terminal exposed from the inorganic insulating film and the organic insulating film at a same surface as the p-side external terminal.

7. The device of claim 1, wherein

the p-side interconnection portion includes a first p-side interconnection layer provided on the inorganic insulating film and the organic insulating film, and a second p-side interconnection layer provided on the first p-side interconnection layer, and

the n-side interconnection portion includes a first n-side interconnection layer provided on the inorganic insulating film and the organic insulating film, and a second n-side interconnection layer provided on the first n-side interconnection layer.

8. The device of claim 7, wherein the second p-side interconnection layer is thicker than the first p-side interconnection layer, and the second n-side interconnection layer is thicker than the first n-side interconnection layer.

9. The device of claim 7, further comprising:

an insulating material filling in between the first p-side interconnection layer and the first n-side interconnection layer, and between the second p-side interconnection layer and the second n-side interconnection layer.

10. The device of claim 7, wherein

the second p-side interconnection layer includes a p-side external terminal exposed from the inorganic insulating film, the organic insulating film, and the insulating material, and

the second n-side interconnection layer includes an n-side external terminal exposed from the inorganic insulating film, the organic insulating film, and the insulating material at a same surface as the p-side external terminal.

16. The device of claim 1, further comprising:

a transparent body provided on the first surface and being transparent to emission light of the light emitting layer.

17. The device of claim 16, wherein the transparent body is a substrate thicker than the semiconductor layer.

18. The device of claim 17, wherein the substrate has a refractive index between refractive index of the semiconductor layer and refractive index of air.

19. The device of claim 16, wherein the transparent body is a phosphor layer.

20. The device of claim 19, wherein the phosphor layer includes a transparent resin having a refractive index between refractive index of the semiconductor layer and refractive index of air, and phosphor particles dispersed in the transparent resin.

11. A semiconductor light emitting device comprising:

a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer;

a p-side electrode provided on a region including the light emitting layer on the second surface;

an n-side electrode provided on a region not including the light emitting layer on the second surface;

an insulating film provided on the second surface side and including a first via penetrated to the p-side electrode and a second via penetrated to the n-side electrode;

a first p-side interconnection layer provided on the insulating film and electrically connected to the p-side electrode through the first via;

a first n-side interconnection layer provided on the insulating film, spaced from the first p-side interconnection layer, and electrically connected to the n-side electrode through the second via;

a second p-side interconnection layer provided on the first p-side interconnection layer and having a smaller planar size than the first p-side interconnection layer; and

a second n-side interconnection layer provided on the first n-side interconnection layer and having a smaller planar size than the first n-side interconnection layer,

the first p-side interconnection layer and the first n-side interconnection layer being spaced by a gap from each other, and the second p-side interconnection layer and the second n-side interconnection layer being spaced by a gap from each other, and

a step being formed between the first p-side interconnection layer and the second p-side interconnection layer, and between the first n-side interconnection layer and the second n-side interconnection layer.

12. The device of claim 11, wherein

the insulating film is an inorganic insulating film,

the device further includes an organic insulating film provided on the inorganic insulating film, at least on a portion between the first p-side interconnection layer and the first n-side interconnection layer, and

an end portion of the first p-side interconnection layer on the first n-side interconnection layer side and an end portion of the first n-side interconnection layer on the first p-side interconnection layer side override the organic insulating film.

13. The device of claim 12, wherein part of the first n-side interconnection layer overlaps the inorganic insulating film on the region including the light emitting layer.

14. The device of claim 11, wherein area of the first n-side interconnection layer spread on the insulating film is larger than area of the first n-side interconnection layer connected to the n-side electrode through the second via.

15. The device of claim 11, wherein the second p-side interconnection layer is thicker than the first p-side interconnection layer, and the second n-side interconnection layer is thicker than the first n-side interconnection layer.