Apparatus for CVD and ALD with an Elongate Nozzle and Methods Of Use

• US 20130323422A1
• Filed: 05/29/2012
• Published: 12/05/2013
• Est. Priority Date: 05/29/2012
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Peidous, Igor
• Application Number:
  US13/482,552
• Publication Number:
  US 20130323422A1
• Time in Patent Office: Days
• US Class Current: 427/255.7
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45563 Gas nozzles

Abstract

Provided are atomic layer deposition apparatus and methods including a processing chamber with a substrate support at least one elongate nozzle movable relative to the substrate support. The processing chamber has a first gas at a first pressure and a second gas is provided from the elongate nozzle at a second pressure greater than the first pressure.

Claims

1. A deposition system comprising:

a processing chamber;

a gas inlet to provide a first gas at a first pressure to the processing chamber;

a substrate support disposed within the processing chamber to support a substrate; and

an elongate nozzle to provide a second gas at a second pressure to the processing chamber, wherein the elongate nozzle is adjacent the substrate support, the second pressure is higher than the first pressure, and at least one of the elongate nozzle and the substrate support is movable relative to the other one of the elongate nozzle and the substrate support.

2. The system of claim 1, wherein, when a substrate is present, movement of the elongate nozzle covers the entire substrate.

3. The system of claim 1, wherein, when a substrate is present, the elongate nozzle has a width greater than the substrate.

4. The system of claim 1, wherein the substrate support is in a substantially fixed position and the elongate nozzle moves.

5. The system of claim 1, wherein the elongate nozzle is in a substantially fixed position and the substrate support moves.

6. The system of claim 1, wherein the substrate support comprises a heater.

7. The system of claim 1, wherein the substrate support rotates either continuously or in discrete steps.

8. The system of claim 1, wherein, when a substrate is present, the elongate nozzle is in the range of about 0.5 mm to about 10 mm from the substrate.

9. The system of claim 1, wherein the elongate nozzle moves relative to the substrate support at a speed in the range of about 10 mm/sec to about 1 m/sec.

10. The system of claim 1, wherein the first gas and the second gas are reactive gases.

11. The system of claim 1, further comprising a second elongate nozzle to provide a third gas at a pressure greater than the first pressure to the processing chamber.

12. The system of claim 11, wherein the substrate support is in a substantially fixed position and each elongate nozzle is independently movable.

13. The system of claim 11, wherein the first gas is an inert gas and each of the second gas and third gas are different reactive gases.

14. The system of claim 11, wherein each of the first gas, the second gas and the third gas are different reactive gases.

15. A cluster tool comprising a central transfer chamber and the atomic layer deposition system of claim 1.

16. An atomic layer deposition system comprising:

a processing chamber;

a gas inlet to provide a first gas at a first pressure to the processing chamber;

a substrate support disposed within the processing chamber to support a substrate in a substantially fixed position;

a first elongate nozzle to provide a second gas at a second pressure toward the substrate support in the processing chamber, the first elongate nozzle movable relative to the substrate support, the second pressure higher than the first pressure; and

a second elongate nozzle to provide a third gas toward the substrate support in the processing chamber, the second elongate nozzle independently movable relative to the substrate support and the first elongate nozzle.

17. A method of processing a substrate in a processing chamber, the method comprising:

supporting the substrate on a substrate support;

exposing the substrate to a first gas in the processing chamber; and

moving a first elongate nozzle relative to and above the substrate support, the first elongate nozzle providing a second gas to the processing chamber toward the substrate, wherein the first elongate nozzle moves reciprocally relative to the substrate so that portions of the substrate under the first elongate nozzle are exposed to the second gas and portions of the substrate not under the first elongate nozzle are exposed to the first gas.

18. The method of claim 17, further comprising moving a second elongate nozzle relative to and above the substrate support, the second elongate nozzle providing a third gas to the processing chamber toward the substrate, the second elongate nozzle adjacent to the first elongate nozzle and independently movable relative to the first elongate nozzle and the substrate.

19. The method of claim 18, wherein the first gas is an inert gas and each of the second gas and third gas are different reactive gases.

20. The method of claim 18, wherein each of the first gas, the second gas and the third gas are different reactive gases.