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OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20130328102A1
  • Filed: 08/14/2013
  • Published: 12/12/2013
  • Est. Priority Date: 10/29/2010
  • Status: Active Grant
First Claim
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1. An optoelectronic device comprising:

  • a substrate; and

    an epitaxial stack including a first semiconductor layer having a first conductivity-type impurity, an active layer, and a second semiconductor layer having a second conductivity-type impurity formed in sequence on the substrate;

    a hollow component formed inside the active layer or the second semiconductor layer, wherein the layer with the hollow component is doped with an additional impurity.

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