INDUCTOR DEVICE AND FABRICATION METHOD
First Claim
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1. An inductor device comprising:
- a semiconductor substrate;
a dielectric layer disposed on the semiconductor substrate;
a planar spiral wiring disposed on the dielectric layer, the planar spiral wiring including a first spiral metal wiring and a second spiral metal wiring connected to a first end of the first spiral metal wiring, wherein the second spiral metal wiring includes at least two sub-metal-lines isolated with one another;
a first contact layer disposed on the dielectric layer and connected to a second end of the first spiral metal wiring; and
a second contact layer coupled to the at least two sub-metal-lines such that the at least two sub-metal-lines are in a parallel configuration.
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Abstract
Various embodiments provide inductor devices and fabrication methods. In one embodiment, an inductor device can include a first dielectric layer disposed on a semiconductor substrate; a first planar spiral wiring disposed on the first dielectric layer, and optionally one or more second planar spiral wirings disposed over the first planar spiral wiring. Each of the first and the optional second planar spiral wirings can include a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring. The second spiral metal wiring can include at least two sub-metal-lines isolated with one another.
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Citations
20 Claims
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1. An inductor device comprising:
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a semiconductor substrate; a dielectric layer disposed on the semiconductor substrate; a planar spiral wiring disposed on the dielectric layer, the planar spiral wiring including a first spiral metal wiring and a second spiral metal wiring connected to a first end of the first spiral metal wiring, wherein the second spiral metal wiring includes at least two sub-metal-lines isolated with one another; a first contact layer disposed on the dielectric layer and connected to a second end of the first spiral metal wiring; and a second contact layer coupled to the at least two sub-metal-lines such that the at least two sub-metal-lines are in a parallel configuration. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An inductor device comprising:
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a semiconductor substrate; a first dielectric layer disposed on the semiconductor substrate; a first planar spiral wiring disposed on the first dielectric layer; one or more second planar spiral wirings disposed over the first planar spiral wiring, wherein each of the first and the one or more second planar spiral wirings includes a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring, the second spiral metal wiring includes at least two sub-metal-lines isolated with one another, and the first spiral metal wiring includes at least one sub-metal-line; a second dielectric layer disposed between adjacent layers of the first and the one or more second planar spiral wirings; and a conductive plug disposed through an entire thickness of the second dielectric layer to connect the adjacent layers of the first and the one or more second planar spiral wirings such that the first planar spiral wiring is configured in series with the one or more second planar spiral wirings. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method of forming an inductor device comprising:
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providing a semiconductor substrate; forming a first dielectric layer on the semiconductor substrate; and forming a first planar spiral wiring on the first dielectric layer, wherein the first planar spiral wiring includes a first spiral metal wiring and a second spiral metal wiring connected to a first end of the first spiral metal wiring, the second spiral metal wiring includes at least two sub-metal-lines isolated with one another, and the first spiral metal wiring includes at least one sub-metal-line. - View Dependent Claims (17, 18, 19, 20)
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Specification