OPTICAL DEVICE PROCESSING METHOD

• US 20130330869A1
• Filed: 06/04/2013
• Published: 12/12/2013
• Est. Priority Date: 06/12/2012
• Status: Active Grant

• Current Assignee: Disco Corporation
• Original Assignee: Disco Corporation
• Inventors: SEKIYA, Kazuma
• Granted Patent: US 8,945,963 B2
• Time in Patent Office: Days
• US Class Current: 438/42
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

An optical device processing method including: a groove forming step of forming a plurality of grooves on a front side of a sapphire substrate; a film forming step of forming an epitaxial film on the front side of the sapphire substrate after performing the groove forming step, thereby forming a plurality of optical devices and a plurality of crossing division lines for partitioning the optical devices; and a dividing step of dividing the sapphire substrate with the epitaxial film along the division lines after performing the film forming step, thereby obtaining a plurality of individual optical device chips.

Claims

1. An optical device processing method comprising:

a groove forming step of forming a plurality of grooves on a front side of a sapphire substrate;

a film forming step of forming an epitaxial film on the front side of the sapphire substrate after performing the groove forming step, thereby forming a plurality of optical devices and a plurality of crossing division lines for partitioning the optical devices; and

a dividing step of dividing the sapphire substrate with the epitaxial film along the division lines after performing the film forming step, thereby obtaining a plurality of individual optical device chips.

2. The optical device processing method according to claim 1, wherein the grooves to be formed in the groove forming step are respectively aligned with the division lines to be formed in the film forming step.

3. The optical device processing method according to claim 1, wherein the sapphire substrate has a diameter of 8 inches or more and a thickness of 1 mm or less.