THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE
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Abstract
The invention provides a thin film transistor that can reduce an off-current flowing in end-parts in a channel width direction of a channel layer and a manufacturing method therefor.
Widths of a source electrode (160a) and a drain electrode (160b) are smaller than a width of a channel layer (140). Accordingly, in the channel layer (140), low resistance regions (140b) are formed to surround respectively the source electrode (160a) and the drain electrode (160b). A high resistance region (140a) having a higher resistance value than those of the low resistance regions (140b) remains not only in the region sandwiched between the two low resistance regions (140b), but also in the end parts in the channel width direction. As a result, in a TFT (100), the high resistance region (140a) is extended not only to the channel region sandwiched between the source electrode (160a) and the drain electrode (160b), but also to the end parts in the channel width direction. Accordingly, the off-current flowing through the end parts in the channel width direction reduces.
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Citations
36 Claims
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1-18. -18. (canceled)
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19. :
- A thin film transistor formed on an insulating substrate, comprising;
a gate electrode formed on the insulating substrate; a gate insulating film formed to cover the gate electrode; a source electrode and a drain electrode formed on the gate insulating film with a predetermined distance, to sandwich the gate electrode; and a channel layer made of an oxide semiconductor layer which is formed in a region sandwiched between the source electrode and the drain electrode and of which one end and the other end are respectively electrically connected to the source electrode and the drain electrode, wherein the channel layer includes two first regions each having a width larger than the source electrode and the drain electrode and having a first resistance value, and a second region sandwiched between the two first regions and having a second resistance value higher than the first resistance value, and the second region is extended to end parts in a channel width direction. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 34, 35, 36)
- A thin film transistor formed on an insulating substrate, comprising;
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31. :
- A manufacturing method for a thin film transistor formed on an insulating substrate, the method comprising the steps of;
forming a gate electrode on an insulating substrate; forming a gate insulating film to cover the gate electrode; forming a channel layer made of an oxide semiconductor layer, on the gate insulating film; forming a source electrode and a drain electrode, on the gate insulating film; and performing first annealing, after forming a passivation film which covers the insulating substrate, wherein the passivation film is made of a silicon oxide film. - View Dependent Claims (32, 33)
- A manufacturing method for a thin film transistor formed on an insulating substrate, the method comprising the steps of;
Specification