SYSTEMS AND METHODS FOR MEASURING TEMPERATURE AND CURRENT IN INTEGRATED CIRCUIT DEVICES

• US 20130334531A1
• Filed: 06/15/2012
• Published: 12/19/2013
• Est. Priority Date: 06/15/2012
• Status: Abandoned Application

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Jost, Franz
• Application Number:
  US13/524,437
• Publication Number:
  US 20130334531A1
• Time in Patent Office: Days
• US Class Current: 257/48
• CPC Class Codes: G01R 19/0092 measuring current only all subgroups of G01R19/00 take precedence
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/647 Resistive arrangements H01L23/66, H01L23/62 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Embodiments relate to measurement of temperature and current in semiconductor devices. In particular, embodiments relate to monolithic semiconductor, such as power semiconductor, and sensor, such as a current or temperature sensor, device. In embodiments, temperature and/or current sensing features are monolithically integrated within semiconductor devices. These embodiments thereby can provide direct measurement of temperature and current, in contrast with conventional solutions that provide temperature and current sensing near or alongside but not integrated within the actual semiconductor device. For example, in one embodiment an additional layer structure is applied to a power semiconductor stack in backend processing. This monolithic integration provides for localized measurement of temperature and/or current, an advantage over conventional side-by-side configurations.

Claims

1. A monolithic semiconductor device comprising:

a semiconductor device portion; and

a sensor portion monolithically formed with the semiconductor device portion and configured to sense at least one characteristic of the semiconductor device portion.

2. The device of claim 1, wherein the semiconductor device portion comprises a power semiconductor device portion.

3. The device of claim 2, wherein the power semiconductor device portion comprises one of an insulated gate bipolar transistor (IGBT) or a power metal-oxide-semiconductor field-effect transistor (MOSFET).

4. The device of claim 2, wherein the at least one characteristic comprises a temperature or a current.

5. The device of claim 1, wherein the sensor portion is monolithically formed with the semiconductor device portion in as backend manufacturing process.

6. The device of claim 1, wherein the sensor portion comprises a thin metallic layer.

7. The device of claim 6, herein the thin metallic layer comprises at least one of platinum nickel iron, nickel, or magnetoresistive (xMR) material.

8. The device of claim 7 wherein the thin metallic layer comprises an xMR sensor bridge.

9. The device of claim 6, further comprising an external resistor element coupled to the thin metallic layer, wherein the sensor portion is configured to sense the at least one characteristic by measuring one of a current drop or a voltage drop across the external resistor element.

10. The device of claim 6, wherein the sensor portion further comprises a contact layer and an isolation layer.

11. The device of claim 1 wherein the sensor portion is coupled to the semiconductor device portion by an isolation layer.

12. A semiconductor device comprising

a semiconductor device portion;

sensing portion configured to sense at least one of a temperature or a current of the semiconductor device portion; and

an isolation layer coupled between the semiconductor device portion and the sensing portion such that the semiconductor device portion, the isolation layer and the sensing portion form a monolithic semiconductor device.

13. The device of claim 12, wherein the semiconductor device portion comprises a power semiconductor device.

14. The device of claim 13, wherein the power semiconductor device comprises one of an insulated gate bipolar transistor (IGBT) or a power metal-oxide-semiconductor field-effect transistor (MOSFET).

15. The device of claim 12, wherein the sensing portion comprises to sensor layer and a contact layer.

16. The device of claim. 12, wherein the sensing portion comprises a sensor bridge.

17. A method comprising:

forming a semiconductor device;

forming a sensor device to sense at least one characteristic of the semiconductor device; and

forming, an isolation layer to couple the semiconductor device and the sensor device to form a monolithic structure.

18. The method of claim 17, wherein forming a semiconductor device comprises forming a power semiconductor device.

19. The method of claim 18, wherein forming a power semiconductor device comprises forming a switching device.

20. The method of claim 17, further comprising sensing a current flowing in the semiconductor device by the sensor device.

21. The method of claim 17, further comprising, sensing a temperature of the semiconductor device by the sensor device.

22. The method of claim 21, further comprising:

sensing a current flowing in the semiconductor device and the temperature of the semiconductor device by the sensor device;

determining at least one of an instantaneous current value, a maximum current value or a variation over time of the current from the sensing; and

using a result of the determining to predict an operational lifetime of the semiconductor device.

23. The method of claim 17, wherein forming the sensor device comprises forming a sensor bridge.

24. The method of claim 23, wherein forming a sensor bridge comprises forming at least one magnetoresistive element coupled in the sensor bridge.

25. The method of claim 23, further comprising coupling a resistor to the sensor bridge;

and measuring a voltage or current drop across the resistor to sense the at least one characteristic of the semiconductor device.

26. The method of claim 25, further comprising multiplexing the resistor to a voltage or current source.

27. The method of claim 26, further comprising measuring the voltage or current drop across the resistor with the resistor multiplexed to the voltage or current source and without the resistor multiplexed to the voltage or current source;

and determining a ratio of the measuring.

28. To A method comprising:

providing a monolithic power semiconductor and sensing device; and

sensing a characteristic of the power semiconductor device by the sensing device.

29. The method of claim 28, wherein the characteristic comprises at least one of a temperature or a current.

30. The method of claim 28, wherein the sensing device comprises a thin film sensing device.