LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM
First Claim
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1. A light emitting device, comprising:
- a first semiconductor layer;
a plurality of convex structures disposed on a top surface of the first semiconductor layer;
a first uneven layer on a top surface of the plurality of convex structures;
a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and
a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer,wherein the nonconductive layer is formed in an uneven layer and includes a contact portion contacted directly with the top surface of the plurality of convex structures,wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer,wherein the first uneven layer is formed of a different material from the plurality of convex structures.
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Abstract
A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
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Citations
20 Claims
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1. A light emitting device, comprising:
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a first semiconductor layer; a plurality of convex structures disposed on a top surface of the first semiconductor layer; a first uneven layer on a top surface of the plurality of convex structures; a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer on the active layer, wherein the nonconductive layer is formed in an uneven layer and includes a contact portion contacted directly with the top surface of the plurality of convex structures, wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer, wherein the first uneven layer is formed of a different material from the plurality of convex structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A light emitting device, comprising:
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a first semiconductor layer; a plurality of convex structures on the first semiconductor layer; a first uneven layer on the plurality of convex structures; a nonconductive layer between the top surface of the plurality of convex structures and the first uneven layer; and a light emitting structure layer disposed on a top surface of the first uneven layer, the light emitting structure layer including a first conductive semiconductor layer including an n-type dopant, an active layer on the first conductive semiconductor layer and a second conductive semiconductor layer including a p-type dopant on the active layer, wherein the plurality of convex structures is disposed between the first semiconductor layer and the first uneven layer, wherein the nonconductive layer is formed in a uneven layer, wherein the nonconductive layer is formed of a different material from the plurality of convex structures and the first uneven layer, wherein a portion of the nonconductive layer and a portion of the first uneven layer are disposed between the plurality of convex structures. - View Dependent Claims (17, 18, 19, 20)
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Specification