OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20130334555A1
• Filed: 08/16/2013
• Published: 12/19/2013
• Est. Priority Date: 02/18/2011
• Status: Abandoned Application

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: HSIEH, Min-Hsun, HSU, Ming-Chi, YANG, Hung-Chih
• Application Number:
  US13/968,659
• Publication Number:
  US 20130334555A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

An optoelectronic device comprising: a substrate; and a transition stack formed on the substrate comprising one first transition layer formed on the substrate having a first hollow component formed inside the first transition layer and a second transition layer formed on the first transition layer having a second hollow component formed inside the second transition layer wherein the first hollow component and the second hollow component having a volume respectively, and the volume of the first hollow component is different with the second hollow component and the material of the transition stack comprises at least two element.

Claims

1. An optoelectronic device comprising:

a substrate; and

a transition stack formed on the substrate comprising one first transition layer formed on the substrate having a first hollow component formed inside the first transition layer and a second transition layer formed on the first transition layer having a second hollow component formed inside the second transition layer wherein the first hollow component and the second hollow component having a volume respectively, and the volume of the first hollow component is different with the second hollow component and the material of the transition stack comprises at least two element.

2. The optoelectronic device of claim 1, wherein more than one of the first hollow component are formed inside the first transition stack and wherein more than one of the second hollow component are formed inside the second transition stack and at least two first hollow components and/or at least two second hollow components form a mesh structure, a porous structure, or a regular array wherein the average distance of the first hollow components and/or the second hollow components can be 10 nm-2000 nm and the porosity of the hollow components can be 5-90%.

3. The optoelectronic device of claim 2, wherein the density of the first hollow components and the density of the second hollow components is different.

4. The optoelectronic device of claim 1, further comprising a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer formed on the transition stack.

5. The optoelectronic device of claim 4, wherein the material of the transition stack, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

6. The optoelectronic device of claim 3, wherein the volume, width and/or the density of the first hollow components is larger than the volume, width and/or the density of the second hollow components.

7. The optoelectronic device of claim 1, wherein the transition stack is an n-type doped layer with the doping concentration of 1E15-1E19 cm⁻

3 and/or the doping concentration of the first transition layer is different with the doping concentration of the second transition layer.

8. The optoelectronic device of claim 2, wherein first hollow components and the second hollow components are photonic crystal structure.

9. The optoelectronic device of claim 1, further comprising a connecting layer formed on the transition stack, and the connecting layer is an unintentional doped layer or an undoped layer.

10. The optoelectronic device of claim 1, wherein the transition stack further comprising a third transition layer formed on the second transition layer having a third hollow component formed inside the third transition layer wherein the third hollow component having a volume, and the volume of the third hollow component is different with the first hollow component and the second hollow component.

11. A method of fabricating an optoelectronic device comprising:

providing a substrate;

forming a first transition layer on the substrate;

forming one first hollow component inside the first transition layer;

forming a second transition layer on the first transition layer; and

forming one second hollow component inside the second transition layer wherein the first hollow component and the second hollow component having a volume respectively, and the volume of the first hollow component is different with the second hollow component and the material of the transition stack comprises at least two element.

12. The method of fabricating an optoelectronic device of claim 11, wherein the first hollow component and the second hollow component is formed by wet etching, electrochemical etching, lateral electrochemical etching or dry etching.

13. The method of fabricating an optoelectronic device of claim 11, wherein more than one of the first hollow component are formed inside the first transition stack and wherein more than one of the second hollow component are formed inside the second transition stack and at least two first hollow components and/or at least two second hollow components form a mesh structure, a porous structure, or a regular array wherein the average distance of the first hollow components and/or the second hollow components can be 10 nm-2000 nm and the porosity of the hollow components can be 5-90%.

14. The method of fabricating an optoelectronic device of claim 12, wherein the density of the first hollow components and the density of the second hollow components are different.

15. The method of fabricating an optoelectronic device of claim 11, further comprising a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer formed on the transition stack and the material of the transition stack, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer contains one element selected from the group consisting of Al, Ga, In, As, P, and N.

16. The method of fabricating an optoelectronic device of claim 14, wherein the volume, width and/or the density of the first hollow components is larger than the volume, width and/or the density of the second hollow components.

17. The method of fabricating an optoelectronic device of claim 11, wherein the first hollow component and the second component are formed by electrochemical etching and the transition stack is an n-type doped layer with the doping concentration of 1E15-1E19 cm⁻

3 and/or the doping concentration of the first transition layer is different with the doping concentration of the second transition layer.

18. The method of fabricating an optoelectronic device of claim 13, wherein first hollow components and the second hollow components are photonic crystal structure.

19. The method of fabricating an optoelectronic device of claim 11, further comprising a connecting layer formed on the transition stack, and the connecting layer is an unintentional doped layer or an undoped layer.

20. The method of fabricating an optoelectronic device of claim 11, wherein the transition stack further comprising a third transition layer formed on the second transition layer having a third hollow component formed inside the third transition layer wherein the third hollow component having a volume, and the volume of the third hollow component is different with the first hollow component and the second hollow component.