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SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

  • US 20130334596A1
  • Filed: 05/02/2013
  • Published: 12/19/2013
  • Est. Priority Date: 06/15/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate comprising a trench;

    a first electrode disposed below the trench;

    a second electrode disposed above the trench, a first insulating layer being disposed between the first electrode and the second electrode;

    a first contact arranged in a first direction of the substrate and connected to the first electrode; and

    a second contact arranged in second direction that is different from the first direction, the second contact being connected to the second electrode.

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