MEMS Devices and Fabrication Methods Thereof
First Claim
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1. A semiconductor device comprising:
- a carrier having a plurality of cavities;
a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, where the MEMS substrate comprises;
a first side bonded on the carrier;
a moving element located between a top electrode and a bottom electrode; and
a second side having a plurality of bonding pads; and
a semiconductor substrate bonded on the MEMS substrate.
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Abstract
A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a carrier having a plurality of cavities; a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, where the MEMS substrate comprises; a first side bonded on the carrier; a moving element located between a top electrode and a bottom electrode; and a second side having a plurality of bonding pads; and a semiconductor substrate bonded on the MEMS substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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providing a micro-electro-mechanical system (MEMS) substrate having; a sacrificial layer on a first side; providing a carrier including a plurality of cavities; bonding the first side of the MEMS substrate on the carrier; forming a first bonding material layer on a second side of the MEMS substrate; applying a sacrificial layer removal process to the MEMS substrate; providing a semiconductor substrate including a second bonding material layer; and bonding the semiconductor substrate on the second side of the MEMS substrate. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method comprising:
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providing a micro-electro-mechanical system (MEMS) device including; forming a first sacrificial dielectric layer having a plurality of sealed trenches on a first side of the MEMS substrate; forming a plurality of electrodes and mechanical bumps on the first sacrificial dielectric layer; depositing a vapor HF stop layer on the first sacrificial dielectric layer; depositing a second sacrificial dielectric layer on the vapor HF stop layer; and forming a bonding layer on the second sacrificial dielectric layer; providing a carrier including a plurality of cavities; bonding the first side of the MEMS substrate on the carrier; forming a first bonding material layer on a second side of the MEMS substrate; applying a sacrificial layer removal process to the MEMS substrate; providing a semiconductor substrate including a second bonding material layer; and bonding the semiconductor substrate on the second side of the MEMS substrate. - View Dependent Claims (19, 20)
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Specification