FILM DEPOSITION METHOD

• US 20130337658A1
• Filed: 06/12/2013
• Published: 12/19/2013
• Est. Priority Date: 06/14/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Kaminishi, Masahiko, Ise, Yoshinobu, Ogawa, Jun, Ikegawa, Hiroaki
• Granted Patent: US 8,962,495 B2
• Time in Patent Office: Days
• US Class Current: 438/782
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/68764 characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other.

Claims

1. A film deposition method using a film deposition apparatus, the film deposition apparatus including:

a turntable rotatably provided in a vacuum chamber, the turntable including a substrate loading area in an upper surface to hold a substrate thereon;

a first gas supply part arranged in a first process area zoned above the upper surface of the turntable and configured to supply a gas onto the upper surface of the turntable;

a second gas supply part arranged in a second process area distanced from the first process area along a circumferential direction of the turntable and configured to supply a gas onto the upper surface of the turntable;

a separation gas supply part provided between the first process area and the second process area in the vacuum chamber and configured to supply a separation gas onto the upper surface of the turntable; and

a separation area including a ceiling surface configured to form a narrow space relative to the upper surface of the turntable in order to introduce the separation gas from the separation gas supply part to the first process area and the second process area, the ceiling surface having a width along the circumferential direction of the turntable, the width broadening with distance from the center of the turntable in a radial direction of the turntable,

the film deposition method comprising steps of;

supplying a first reaction gas from the first gas supply part to the first process area, and supplying a second reaction gas capable of reacting with the first reaction gas from the second gas supply part to the second process area, while rotating the turntable and supplying the separation gas from the separation gas part to separate the first process area and the second process area from each other; and

supplying the second reaction gas from the second gas supply part without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas from the separation gas part to separate the first process area and the second process area from each other.

2. The film deposition method as claimed in claim 1, wherein the first reaction gas is adsorptive to a surface of the substrate.

3. The film deposition method as claimed in claim 1, wherein the first reaction gas is an organic metal gas.

4. The film deposition method as claimed in claim 1, wherein the first reaction gas is an organic metal gas containing a zirconium.

5. The film deposition method as claimed in claim 1, wherein the second reaction gas is an oxygen-containing gas.

6. The film deposition method as claimed in claim 1, wherein the second reaction gas is an ozone gas.