METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS

• US 20130337660A1
• Filed: 12/16/2011
• Published: 12/19/2013
• Est. Priority Date: 12/27/2010
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Hirose, Yoshiro, Akae, Naonori, Takasawa, Yushin, Ota, Yosuke
• Granted Patent: US 9,196,473 B2
• Time in Patent Office: Days
• US Class Current: 438/786
• CPC Class Codes: C23C 16/308 Oxynitrides
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

Provided: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

Claims

1. A method of manufacturing a semiconductor device, comprising:

forming an oxynitride film having a specific film thickness on a substrate by alternately repeating;

forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused;

changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate heated in the processing vessel under a pressure of less than atmospheric pressure; and

changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate heated in the processing vessel under a pressure of less than atmospheric pressure,

interposing into the above sequences, purging of an inside of the processing vessel by supplying an inert gas into the processing vessel,

wherein in forming the specific element-containing layer, the source gas is supplied to the substrate through a nozzle provided at a lateral side of the substrate, and at this time, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas to the substrate through the nozzle together with the source gas.

2. The method of claim 1, wherein in changing the nitride layer to the oxynitride layer, the nitride layer is oxidized without saturating an oxidation reaction of the nitride layer by the oxygen-containing gas.

3. The method of claim 1, wherein the oxygen-containing gas includes a nitrogen oxide-based gas.

4. The method of claim 1, wherein the oxygen-containing gas includes at least one of the gases selected from the group consisting of a N₂O gas, a NO gas, and a NO₂ gas.

5. The method of claim 1, wherein the oxygen-containing gas includes a N₂O gas.

6. The method of claim 1, wherein a temperature of the substrate in forming the oxynitride film having the specific film thickness, is set to 350°

C. or more and 950°

C. or less.

7. The method of claim 1, wherein a temperature of the substrate in forming the oxynitride film having the specific film thickness, is set to 700°

C. or more and 950°

C. or less.

8. The method of claim 1, wherein a temperature of the substrate in forming the oxynitride film having the specific film thickness, is set to 750°

C. or more and 950°

C. or less.

9. The method of claim 1, wherein a temperature of the substrate in forming the oxynitride film having the specific film thickness, is set to 800°

C. or more and 950°

C. or less.

10. A method of processing a substrate, comprising:

forming an oxynitride film having a specific film thickness on a substrate by alternately repeating;

forming a specific element-containing layer on the substrate by supplying a source gas containing a specific element to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused;

changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate heated in the processing vessel under a pressure of less than atmospheric pressure; and

changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate heated in the processing vessel under a pressure of less than atmospheric pressure;

interposing into the above sequences, purging of an inside of the processing vessel by supplying an inert gas into the processing vessel,

wherein in forming the specific element-containing layer, the source gas is supplied to the substrate through a nozzle provided at a lateral side of the substrate, and at this time, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas to the substrate through the nozzle together with the source gas.

11. A substrate processing apparatus, comprising:

a processing vessel configured to house a substrate;

a heater configured to heat the substrate in the processing vessel;

a source gas supply system configured to supply a source gas containing a specific element into the processing vessel;

a nitrogen-containing gas supply system configured to supply a nitrogen-containing gas into the processing vessel;

an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the processing vessel;

an inert gas or a hydrogen-containing gas supply system configured to supply an inert gas or a hydrogen-containing gas into the processing vessel;

a pressure adjustment part configured to adjust a pressure in the processing vessel; and

a control part configured to control the heater, the source gas supply system, the nitrogen-containing gas supply system, the oxygen-containing gas supply system, the inert gas or hydrogen-containing gas supply system and the pressure adjustment part,

so that processing of forming an oxynitride film having a specific film thickness on the substrate is performed by alternately repeating;

processing of forming a specific element-containing layer on the substrate by supplying the source gas to the substrate heated in the processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused;

processing of changing the specific element-containing layer to a nitride layer by supplying the nitrogen-containing gas to the substrate heated in the processing vessel under a pressure of less than atmospheric pressure; and

processing of changing the nitride layer to an oxynitride layer by supplying the oxygen-containing gas to the substrate heated in the processing vessel under a pressure of less than atmospheric pressure,

processing of interposing into the above sequences, purging of an inside of the processing vessel by supplying the inert gas into the processing vessel,

wherein in forming the specific element-containing layer, the source gas is supplied to the substrate through a nozzle provided at a lateral side of the substrate, and at this time, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying the inert gas or the hydrogen-containing gas to the substrate through the nozzle together with the source gas.