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IN-SITU SCANNER EXPOSURE MONITOR

  • US 20130339910A1
  • Filed: 08/16/2013
  • Published: 12/19/2013
  • Est. Priority Date: 06/23/2011
  • Status: Active Grant
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1. A method, comprising predicting a critical dimension wafer map of patterns exposed on a wafer by a lithography tool, the critical dimension wafer map being predicted from signals generated by the lithography tool during the exposure of the patterns on the wafer.

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