IN-SITU SCANNER EXPOSURE MONITOR
First Claim
1. A method, comprising predicting a critical dimension wafer map of patterns exposed on a wafer by a lithography tool, the critical dimension wafer map being predicted from signals generated by the lithography tool during the exposure of the patterns on the wafer.
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Abstract
A method for predicting pattern critical dimensions in a lithographic exposure process includes defining relationships between critical dimension, defocus, and dose. The method also includes performing at least one exposure run in creating a pattern on a wafer. The method also includes creating a dose map. The method also includes creating a defocus map. The method also includes predicting pattern critical dimensions based on the relationships, the dose map, and the defocus map.
8 Citations
20 Claims
- 1. A method, comprising predicting a critical dimension wafer map of patterns exposed on a wafer by a lithography tool, the critical dimension wafer map being predicted from signals generated by the lithography tool during the exposure of the patterns on the wafer.
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16. A system for predicting pattern critical dimensions in a lithographic exposure process, comprising:
a computing device configured to predict a critical dimension wafer map of patterns exposed on a wafer by a lithography tool, the critical dimension wafer map being predicted from signals generated by the lithography tool during the exposure of the patterns on the wafer. - View Dependent Claims (17, 18)
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19. A computer program product comprising program code stored in a computer readable medium that, when executed on a computing device, causes the computing device to:
predict a critical dimension wafer map of patterns exposed on a wafer by a lithography tool, the critical dimension wafer map being predicted from signals generated by the lithography tool during the exposure of the patterns on the wafer. - View Dependent Claims (20)
Specification