Micro-Stimulation and Data Acquisition From Biological Cells

• US 20130341185A1
• Filed: 06/12/2013
• Published: 12/26/2013
• Est. Priority Date: 06/12/2012
• Status: Active Application

• Current Assignee: IMEC International, Katholieke Universiteit Leuven
• Original Assignee: IMEC International, Katholieke Universiteit Leuven
• Inventors: Collaert, Nadine, Cott, Daire J., De Volder, Michael
• Granted Patent: US 10,274,452 B2
• Time in Patent Office: Days
• US Class Current: 204/403.01
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: G01N 27/308 at least partially made of carbon
• CPC Class Codes: G01N 27/327 Biochemical electrodes , e.g. electrical or mechanical details for in vitro measurements
• CPC Class Codes: G01N 33/4836 using multielectrode arrays

Abstract

The present invention relates to a method for fabricating a semiconductor device for stimulation and/or data recording of biological material to a such semiconductor device. The method comprises providing a semiconductor substrate comprising a first insulating layer; providing a patterned conductive layer on top of the first insulating layer; depositing and patterning a second insulating layer atop the patterned conductive layer; growing carbon nano-sheets atop the second insulating layer; and defining carbon nano-sheet electrode areas on the second insulating layer by etching away the carbon nano-sheets outside of the carbon nano-sheet electrode areas.

Claims

1. A semiconductor device for stimulating and/or data recording of a biological material, the semiconductor device comprising an electrode element which comprises:

a semiconductor substrate;

an insulating layer arranged on the semiconductor substrate; and

an electrode layer arranged atop the insulating layer, the electrode layer comprising at least one electrode, wherein the surface of the at least one electrode is covered by carbon nano-sheets.

2. The semiconductor device according to claim 1, in which the at least one electrode comprises at least one titanium nitride electrode, platinum electrode or metal oxide electrode.

3. The semiconductor device according to claim 1, further comprising integrated circuitry interconnected to the electrode element and adapted for one of recording or stimulating at least one biological cell via the electrode layer.

4. The semiconductor device according to claim 3, wherein the electrode element is at least one of

packaged atop the integrated circuitry;

or

processed atop the integrated circuitry.

5. The semiconductor device according to claim 3, wherein the integrated circuitry is further adapted for amplification and signal processing of a signal obtained from the electrode element.

6. The semiconductor device according to claim 1, further comprising a ring for containing a medium comprising biological material that is attached to the electrode element.

7. The semiconductor device according to claim 1, wherein the semiconductor device is an implantable device adapted for at least one of

recording signals from neural tissue;

or

stimulating the neural tissue.

8. A method for fabricating a semiconductor device for at least one of stimulation of biological material or data recording of biological material comprising:

providing a semiconductor substrate comprising a first insulating layer;

providing a patterned conductive layer on top of the first insulating layer;

depositing and patterning a second insulating layer atop the patterned conductive layer;

growing carbon nano-sheets atop the second insulating layer; and

defining carbon nano-sheet electrode areas on the second insulating layer by etching away the carbon nano-sheets outside of the carbon nano-sheet electrode areas.

9. The method according to claim 8, wherein defining the carbon nano-sheet electrode areas comprises:

applying a resist coating to the second insulating layer;

patterning the resist coating to create the carbon nano-sheet electrode areas;

etching away the carbon nano-sheets outside of the carbon nano-sheet electrode areas; and

removing the resist coating.

10. The method according to claim 8, wherein providing the semiconductor substrate comprises at least one of providing a silicon dioxide material as the first insulating layer on the substrate, and wherein depositing and patterning the second insulating layer comprises providing a silicon dioxide material as the second insulating layer.

11. The method according to claim 8, wherein providing the patterned conductive layer on top of the insulating layer comprises providing on top of the insulating layer at least one of a patterned titanium nitride layer, a patterned platinum layer, or a patterned metal oxide layer.

12. The method according to claim 11, wherein providing the patterned titanium nitride layer comprises depositing the titanium nitride layer by sputtering.

13. The method as according to claim 8, wherein growing the carbon nano-sheets comprises using a plasma process.

14. The method according to claim 13, wherein the plasma process is performed using at least one of:

Radio Frequency Plasma-Enhanced Chemical Vapour Deposition for about 1 minute to about 5 minutes at a pressure less than or equal to about 0.5 Torr and at a temperature in the range of about 600°

C. to 800°

C.;

or

microwave plasma enhanced Chemical Vapour Deposition for about 1 minute to about 5 minutes at a pressure less than or equal to about 1×

10<sup>−

5</sup> Torr and at a temperature in the range of about 400°

C. to about 600°

C.

15. The method according to claim 13, wherein growing the carbon nano-sheets further comprises letting the substrate cool at a pressure less than or equal to about 1×

10<sup>−

5</sup> Torr after applying the plasma process.

16. The method according to claim 8, wherein defining the carbon nano-sheet electrode areas comprises etching away the carbon nano-sheets outside of the carbon nano-sheet electrode areas using an O₂ plasma.

17. The method according to claim 8, further comprising exposing the carbon nano-sheet electrode areas to UV/O₃ to increase hydrophilic behaviour of the carbon nano-sheet electrode areas.

18. The method according to claim 17, wherein exposing the carbon nano-sheet electrode areas to UV/O₃ comprises exposing for an exposure time in the range of less than about 1 minute to about 15 minutes.