Shift Register And Display Device And Driving Method Thereof
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Accused Products
Abstract
The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register.
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Citations
21 Claims
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1. (canceled)
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2. A display device comprising a driver circuit, the driver circuit comprising a shift resister, the shift resister comprising a transistor, the transistor comprising:
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a first gate electrode over a substrate; a first insulating layer over the first gate electrode; an oxide semiconductor layer including a channel formation region over the first insulating layer; a second insulating layer over the oxide semiconductor layer; and a second gate electrode over the second insulating layer; wherein the first gate electrode extends beyond side edges of the oxide semiconductor layer in a channel width direction of the transistor, and wherein the second gate electrode extends beyond the side edges of the oxide semiconductor layer in the channel width direction of the transistor. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A display device comprising a driver circuit, the driver circuit comprising a shift resister, the shift resister comprising a transistor, the transistor comprising:
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a first gate electrode over a substrate; a first insulating layer including a first layer and a second layer over the first gate electrode, wherein each of the first layer and the second layer is selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer and a silicon nitride oxide layer; an oxide semiconductor layer including a channel formation region over the first insulating layer; a second insulating layer over the oxide semiconductor layer, wherein the second insulating layer includes a layer selected from a silicon oxide layer, a silicon nitride oxide layer, an aluminum oxide layer and an aluminum oxynitride layer; and a second gate electrode over the second insulating layer, wherein the first gate electrode extends beyond side edges of the oxide semiconductor layer in a channel width direction of the transistor, and wherein the second gate electrode extends beyond the side edges of the oxide semiconductor layer in the channel width direction of the transistor. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A display device comprising a driver circuit, the driver circuit comprising a shift resister, the shift resister comprising:
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a first line configured to supply a first clock signal; a second line configured to supply a first inverted clock signal; a third line configured to supply a second clock signal; a fourth line configured to supply a second inverted clock signal; a first stage electrically connected to the first line; a second stage electrically connected to the second line; a third stage electrically connected to the third line; and a fourth stage electrically connected to the fourth line, wherein an output terminal of the first stage is electrically connected to an input terminal of the second stage, wherein an output terminal of the third stage is electrically connected to an input terminal of the fourth stage, and wherein the first stage comprises a transistor, the transistor comprising; a first gate electrode over a substrate; a first insulating layer over the first gate electrode; an oxide semiconductor layer including a channel formation region over the first insulating layer; a second insulating layer over the oxide semiconductor layer; and a second gate electrode over the second insulating layer; wherein the first gate electrode extends beyond side edges of the oxide semiconductor layer in a channel width direction of the transistor, and wherein the second gate electrode extends beyond the side edges of the oxide semiconductor layer in the channel width direction of the transistor. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification