Absorbers for High-Efficiency Thin-Film PV
First Claim
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1. A method for forming a semiconductor material on a substrate comprising:
- forming a first layer above a surface of the substrate, wherein the first layer comprises In;
forming a second layer above the first layer, wherein the second layer comprises Cu;
forming a third layer above the second layer, wherein the third layer comprises Cu and Ga;
forming a fourth layer above the third layer, wherein the fourth layer comprises Ag; and
heating the first, second, third and fourth layers in the presence of a chalcogen at a temperature between about 100 C and 700 C.
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Abstract
Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer.
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Citations
11 Claims
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1. A method for forming a semiconductor material on a substrate comprising:
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forming a first layer above a surface of the substrate, wherein the first layer comprises In; forming a second layer above the first layer, wherein the second layer comprises Cu; forming a third layer above the second layer, wherein the third layer comprises Cu and Ga; forming a fourth layer above the third layer, wherein the fourth layer comprises Ag; and heating the first, second, third and fourth layers in the presence of a chalcogen at a temperature between about 100 C and 700 C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification