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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20130344650A1
  • Filed: 08/27/2013
  • Published: 12/26/2013
  • Est. Priority Date: 03/10/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor film over an insulating surface;

    forming a pair of electrodes over the oxide semiconductor film;

    forming a gate insulating film covering the pair of electrodes and the oxide semiconductor film;

    adding first ions to the oxide semiconductor film through the gate insulating film using the pair of electrodes as a mask;

    forming a gate electrode overlapping with the oxide semiconductor film over the gate insulating film; and

    adding second ions to the oxide semiconductor film using the gate electrode as a mask;

    wherein the first ions and the second ions each comprise one of nitrogen, phosphorus, and arsenic.

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