PATTERN FORMATION METHOD
First Claim
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1. A pattern formation method, comprising:
- depositing a first film on a substrate;
forming a second film on the first film;
forming a resist film having a desired pattern on the second film;
etching the second film with an etching gas that does not contain fluorine using the resist film as a mask;
removing the resist film; and
etching the first film with a fluorocarbon gas using the second film as a mask, after the resist film is removed.
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Abstract
According to one embodiment, a mask layer is formed on a film to be processed. A resist film containing a desired pattern is formed on the mask layer. Etching is performed on the above mentioned mask layer with an etching gas that does not contain fluorine. The method also includes removing the resist film. After the resist film is removed, using the mask layer as a mask, an etching is performed on the to be processed film using a fluorocarbon gas.
7 Citations
20 Claims
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1. A pattern formation method, comprising:
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depositing a first film on a substrate; forming a second film on the first film; forming a resist film having a desired pattern on the second film; etching the second film with an etching gas that does not contain fluorine using the resist film as a mask; removing the resist film; and etching the first film with a fluorocarbon gas using the second film as a mask, after the resist film is removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A pattern formation method comprising:
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forming a mask layer on a film to be processed; forming a resist film having a desired pattern on the mask layer; etching the mask layer with an etching gas that does not contain fluorine using the resist film as a mask; removing the resist film; and etching the film to be processed with a fluorocarbon gas using the mask layer as a mask, after the resist film is removed. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A pattern formation method, comprising:
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forming a film to be processed on a substrate; forming a mask layer on the film to be processed; forming a resist film having a desired pattern on the mask layer; etching the mask layer with an etching gas that does not contain fluorine using the resist film as a mask; removing the resist film; and forming features in the film to be processed using the mask layer as a mask by etching the film to be processed with a fluorocarbon gas after the resist film is removed. - View Dependent Claims (19, 20)
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Specification