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METHOD OF ETCHING SILICON NITRIDE FILMS

  • US 20130344702A1
  • Filed: 03/03/2012
  • Published: 12/26/2013
  • Est. Priority Date: 03/04/2011
  • Status: Abandoned Application
First Claim
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1. A method for processing a substrate, comprising:

  • providing a film stack on a substrate, the film stack containing a silicon nitride (SiN) film on the substrate and a mask pattern on the SiN film;

    forming a first plasma from a first process gas containing a carbon-fluorine-containing gas and O2 gas;

    performing a main etch (ME) step by exposing the film stack to the first plasma;

    forming a second plasma from a second process gas containing a carbon-fluorine-containing gas, O2 gas, and a silicon-fluorine-containing gas; and

    performing an over etch (OE) step by exposing the film stack to the second plasma.

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