LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

• US 20140001434A1
• Filed: 05/14/2013
• Published: 01/02/2014
• Est. Priority Date: 06/28/2012
• Status: Abandoned Application

• Current Assignee: Lextar Electronics Corporation (Ennostar, Inc.)
• Original Assignee: Lextar Electronics Corporation (Ennostar, Inc.)
• Inventors: Chen, Ming-Sheng
• Application Number:
  US13/893,381
• Publication Number:
  US 20140001434A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light-emitting diode structure and a manufacturing method thereof are provided. The structure includes a semiconductor substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, an electrode contact layer, a positive electrode and a negative electrode. A stacking layer consisting of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the electrode contact layer is formed on the semiconductor substrate, and a first opening penetrates the electrode contact layer and exposes a part of the second type semiconductor layer. The positive electrode is formed in the first opening. A part of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the electrode contact layer is removed to form a platform structure. The negative electrode is formed on the exposed surface of the first type semiconductor layer.

Claims

1. A light-emitting diode (LED) structure, comprising:

a semiconductor substrate;

a first type semiconductor layer formed on the semiconductor substrate;

a light-emitting layer formed on partial surface of the first type semiconductor layer;

a second type semiconductor layer corresponding to a top surface of the light-emitting layer and formed on the light-emitting layer;

an electrode contact layer formed on the second type semiconductor layer, wherein the electrode contact layer has a first opening exposing partial surface of the second type semiconductor layer;

a positive electrode corresponding to the first opening and formed on the exposed surface of the second type semiconductor layer; and

a negative electrode formed on the surface of the first type semiconductor layer not covered by the light-emitting layer.

2. The LED structure according to claim 1, further comprising a transparent electrode layer formed on the electrode contact layer and having a second opening corresponding to the dimension of the first opening, so that the positive electrode corresponds to the first opening and the second opening and is formed on the exposed surface of the second type semiconductor layer.

3. The LED structure according to claim 2, wherein the transparent electrode layer is indium tin oxide (ITO) or indium zinc oxide (IZO).

4. The LED structure according to claim 1, wherein the positive electrode further covers a part of the electrode contact layer.

5. The LED structure according to claim 2, wherein the positive electrode further covers a part of the transparent electrode layer.

6. The LED structure according to claim 1, wherein the electrode contact layer is a p+ type nitride containing gallium having high doping concentration.

7. The LED structure according to claim 6, wherein the electrode contact layer is a p+ type gallium nitride (GaN) having high doping concentration.

8. The LED structure according to claim 1, wherein the first type semiconductor layer is an n-type nitride containing gallium, and the second type semiconductor layer is a p-type nitride containing gallium.

9. The LED structure according to claim 8, wherein the first type semiconductor layer is an n-type gallium nitride, and the second type semiconductor layer is a p-type gallium nitride.

10. The LED structure according to claim 1, wherein the light-emitting layer is a multi-quantum well (MQW) structure layer.

11. A manufacturing method of an LED structure, the method comprises steps of:

providing a semiconductor substrate;

forming a stacking layer formed by a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer and an electrode contact layer in sequence on the semiconductor substrate, wherein the stacking layer has a first opening which penetrates the electrode contact layer and exposes a part of the second type semiconductor layer;

inserting a metal plug in the first opening and forming a positive electrode on the exposed surface of the second type semiconductor layer;

patterning the stacking layer, removing a part of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer and the electrode contact layer to form a platform structure in a light-emitting area, and exposing partial surface of the first type semiconductor layer in a non-light-emitting area; and

forming a negative electrode on the exposed surface of the first type semiconductor layer.

12. The manufacturing method of an LED structure according to claim 11, wherein the positive electrode further covers a part of the electrode contact layer.

13. The manufacturing method of an LED structure according to claim 11, wherein the electrode contact layer is a p+ type nitride containing gallium having high doping concentration.

14. The manufacturing method of an LED structure according to claim 13, wherein the electrode contact layer is a p+ type gallium nitride having high doping concentration.

15. The manufacturing method of an LED structure according to claim 11, wherein the first type semiconductor layer is an n-type nitride containing gallium, and the second type semiconductor layer is a p-type nitride containing gallium.

16. The manufacturing method of an LED structure according to claim 15, wherein the first type semiconductor layer is an n-type gallium nitride (GaN) structure, and the second type semiconductor layer is a p-type gallium nitride (GaN) structure.

17. The manufacturing method of an LED structure according to claim 11, wherein the light-emitting layer is a multi-quantum well (MQW) structure layer.

18. A manufacturing method of an LED structure, the method comprises steps of:

providing a semiconductor substrate;

forming a stacking layer formed by a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, an electrode contact layer and a transparent electrode layer in sequence on the semiconductor substrate, wherein the stacking layer has a second opening which penetrates the transparent electrode layer and the electrode contact layer and exposes partial surface of the second type semiconductor layer;

inserting a metal plug in the second opening and forming a positive electrode on the exposed surface of the second type semiconductor layer;

patterning the stacking layer, removing a part of the first type semiconductor layer, the light-emitting layer, the second type semiconductor layer, the transparent electrode layer and the electrode contact layer to form a platform structure in a light-emitting area, and exposing partial surface of the first type semiconductor layer in a non-light-emitting area; and

forming a negative electrode on the exposed surface of the first type semiconductor layer.

19. The manufacturing method of an LED structure according to claim 18, wherein the transparent electrode layer is indium tin oxide (ITO) or indium zinc oxide (IZO).

20. The manufacturing method of an LED structure according to claim 18, wherein the positive electrode further covers a part of the transparent electrode layer.

21. The manufacturing method of an LED structure according to claim 18, wherein the electrode contact layer is a p+ type nitride containing gallium having high doping concentration.

22. The manufacturing method of an LED structure according to claim 21, wherein the electrode contact layer is a p+ type gallium nitride having high doping concentration.

23. The manufacturing method of an LED structure according to claim 18, wherein the first type semiconductor layer is an n-type nitride containing gallium, and the second type semiconductor layer is a p-type nitride containing gallium.

24. The manufacturing method of an LED structure according to claim 23, wherein the first type semiconductor layer is an n-type gallium nitride (GaN) structure, and the second type semiconductor layer is a p-type gallium nitride (GaN) structure.

25. The manufacturing method of an LED structure according to claim 18, wherein the light-emitting layer is a multi-quantum well (MQW) structure layer.