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LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF

  • US 20140001434A1
  • Filed: 05/14/2013
  • Published: 01/02/2014
  • Est. Priority Date: 06/28/2012
  • Status: Abandoned Application
First Claim
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1. A light-emitting diode (LED) structure, comprising:

  • a semiconductor substrate;

    a first type semiconductor layer formed on the semiconductor substrate;

    a light-emitting layer formed on partial surface of the first type semiconductor layer;

    a second type semiconductor layer corresponding to a top surface of the light-emitting layer and formed on the light-emitting layer;

    an electrode contact layer formed on the second type semiconductor layer, wherein the electrode contact layer has a first opening exposing partial surface of the second type semiconductor layer;

    a positive electrode corresponding to the first opening and formed on the exposed surface of the second type semiconductor layer; and

    a negative electrode formed on the surface of the first type semiconductor layer not covered by the light-emitting layer.

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