SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS
First Claim
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1. A solid-state imaging device comprising:
- a semiconductor base element;
an organic photoelectric conversion layer formed above the semiconductor base element;
a contact hole formed in an insulating layer on the semiconductor base element;
a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element; and
a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer.
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Abstract
There is provided a solid-state imaging device including a semiconductor base element, an organic photoelectric conversion layer formed above the semiconductor base element, a contact hole formed in an insulating layer on the semiconductor base element, a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer.
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Citations
7 Claims
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1. A solid-state imaging device comprising:
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a semiconductor base element; an organic photoelectric conversion layer formed above the semiconductor base element; a contact hole formed in an insulating layer on the semiconductor base element; a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element; and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer. - View Dependent Claims (2, 3)
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4. A manufacturing method of a solid-state imaging device having an organic photoelectric conversion layer comprising:
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forming a reflecting film reflecting laser light on an insulating layer formed on a semiconductor base element; processing the reflecting film and the insulating layer, and forming a contact hole that reaches the semiconductor base element; forming a contact portion in the semiconductor base element under the contact hole by laser annealing; forming a conductive layer in the contact hole with being connected to the contact portion in the semiconductor base element; and forming a photoelectric conversion part that is electrically connected with the conductive layer and includes the organic photoelectric conversion layer above the semiconductor base element. - View Dependent Claims (5, 6)
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7. An electronic apparatus comprising:
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an optical system; a solid-state imaging device including a semiconductor base element, an organic photoelectric conversion layer formed above the semiconductor base element, a contact hole formed in an insulating layer on the semiconductor base element, a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer; and a signal processing circuit processing an output signal of the solid-state imaging device.
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Specification