SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS

• US 20140001454A1
• Filed: 06/25/2013
• Published: 01/02/2014
• Est. Priority Date: 07/02/2012
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Miyanami, Yuki, Nakazawa, Masashi
• Granted Patent: US 10,833,128 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 19/20 comprising components having an active region that includes an inorganic semiconductor
• CPC Class Codes: H10K 30/80 Constructional details
• CPC Class Codes: H10K 39/10 Organic photovoltaic [PV] modules; Arrays of single organic PV cells
• CPC Class Codes: H10K 39/32 Organic image sensors
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

There is provided a solid-state imaging device including a semiconductor base element, an organic photoelectric conversion layer formed above the semiconductor base element, a contact hole formed in an insulating layer on the semiconductor base element, a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer.

Claims

1. A solid-state imaging device comprising:

a semiconductor base element;

an organic photoelectric conversion layer formed above the semiconductor base element;

a contact hole formed in an insulating layer on the semiconductor base element;

a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element; and

a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer.

2. The solid-state imaging device according to claim 1,

wherein an organic photoelectric conversion part including the organic photoelectric conversion layer and the photoelectric conversion part formed in the semiconductor base element are vertically stacked.

3. The solid-state imaging device according to claim 1,

wherein a back-illuminated structure is employed in which a light incident surface and a circuit-formed surface of the semiconductor base element are different surfaces.

4. A manufacturing method of a solid-state imaging device having an organic photoelectric conversion layer comprising:

forming a reflecting film reflecting laser light on an insulating layer formed on a semiconductor base element;

processing the reflecting film and the insulating layer, and forming a contact hole that reaches the semiconductor base element;

forming a contact portion in the semiconductor base element under the contact hole by laser annealing;

forming a conductive layer in the contact hole with being connected to the contact portion in the semiconductor base element; and

forming a photoelectric conversion part that is electrically connected with the conductive layer and includes the organic photoelectric conversion layer above the semiconductor base element.

5. The manufacturing method of a solid-state imaging device according to claim 4,

wherein, after forming the contact hole, a film including impurities is formed and thereafter the impurities are diffused from the film including impurities by laser annealing to form the contact portion.

6. The manufacturing method of a solid-state imaging device according to claim 4,

wherein, after forming the contact hole, impurities are introduced into the semiconductor base element by an ion implantation method or a plasma doping method, and thereafter, the introduced impurities are activated by laser annealing to form the contact portion.

7. An electronic apparatus comprising:

an optical system;

a solid-state imaging device including

a semiconductor base element,

an organic photoelectric conversion layer formed above the semiconductor base element,

a contact hole formed in an insulating layer on the semiconductor base element,

a conductive layer formed in the contact hole and electrically connecting a photoelectric conversion part which includes the organic photoelectric conversion layer with the semiconductor base element, and

a contact portion which is formed by self-alignment with the conductive layer in the contact hole in the semiconductor base element, and connected to the conductive layer; and

a signal processing circuit processing an output signal of the solid-state imaging device.