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SEMICONDUCTOR DEVICE

  • US 20140001467A1
  • Filed: 06/20/2013
  • Published: 01/02/2014
  • Est. Priority Date: 06/29/2012
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film covering the gate electrode;

    an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided between the oxide semiconductor film and the gate electrode;

    a pair of electrodes in contact with the oxide semiconductor film;

    a first insulating film over the oxide semiconductor film; and

    a second insulating film which is on and in contact with the first insulating film and contains at least nitrogen,wherein the first insulating film is configured to protect the oxide semiconductor film from nitrogen which is released from the second insulating film and enters the oxide semiconductor film, andwherein the amount of hydrogen molecules released by heating from the second insulating film is smaller than 5.0×

    1021 molecules/cm3.

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