SEMICONDUCTOR DEVICE
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Abstract
An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.
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Citations
22 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; and a source electrode layer and a drain electrode layer over and in contact with the oxide semiconductor layer; wherein a hydrogen concentration in a part of the gate insulating layer is less than 6×
1020 atoms/cm3 and a fluorine concentration in the part of the gate insulating layer is greater than or equal to 1×
1020 atoms/cm3. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode layer; a first gate insulating layer over the gate electrode layer; a second gate insulating layer over the first gate insulating layer; an oxide semiconductor layer over and in contact with the second gate insulating layer; and a source electrode layer and a drain electrode layer over and in contact with the oxide semiconductor layer, wherein a hydrogen concentration in a part of the second gate insulating layer is less than 6×
1020 atoms/cm3 and a fluorine concentration in the part of the second gate insulating layer is greater than or equal to 1×
1020 atoms/cm3. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a gate electrode layer; a first gate insulating layer over the gate electrode layer; a second gate insulating layer over the first gate insulating layer; an oxide semiconductor layer over and in contact with the second gate insulating layer; and a source electrode layer and a drain electrode layer over and in contact with the oxide semiconductor layer, wherein a fluorine concentration in a part of the second gate insulating layer is higher than a hydrogen concentration in the part of the second gate insulating layer. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification