Please download the dossier by clicking on the dossier button x
×

MANUFACTURING METHOD OF ARRAY SUBSTRATE, ARRAY SUBSTRATE AND LCD DEVICE

  • US 20140001475A1
  • Filed: 07/12/2012
  • Published: 01/02/2014
  • Est. Priority Date: 07/02/2012
  • Status: Active Grant
First Claim
Patent Images

1. A manufacturing method of an array substrate, comprising the following steps:

  • A. adopting a first mask manufacturing process to from a scan line(s) and a thin film transistor (TFT) gate(s) on a surface of a substrate;

    B. successively paving an insulating layer, a second metal layer and an n+a-Si film are on the substrate;

    then, adopting a second mask manufacturing process to form a scan line(s) and a data line(s) of the array substrate, a source electrode and a drain electrode of the thin film transistor (TFT), and a conducting channel positioned between the source electrode and the drain electrode;

    C. incinerating a photoresistor formed in the second mask manufacturing process to expose the n+a-Si film on both ends of the conducting channel;

    then, paving an a-Si film on a surface of the array substrate and forming reliably electric connection between the formed a-Si film and the n+a-Si film on both ends of the conducting channel;

    D. stripping the photoresistor and also removing the a-Si material covering the surface of the photoresistor;

    forming an undoped active layer by the remaining a-Si film forms;

    E. adopting a third mask manufacturing process, and reserving the n+a-Si film on the covering part of the undoped active layer to form a doped active layer;

    then, forming a transparent conducting layer on the surface of the drain electrode of the thin film transistor (TFT).

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×