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INTEGRATED CIRCUIT DEVICE FEATURING AN ANTIFUSE AND METHOD OF MAKING SAME

  • US 20140001568A1
  • Filed: 11/21/2012
  • Published: 01/02/2014
  • Est. Priority Date: 06/29/2012
  • Status: Active Grant
First Claim
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1. An integrated circuit, comprising:

  • an access transistor including at least one source/drain region; and

    an antifuse having a conductor-insulator-conductor structure, the antifuse including a first conductor that is a first electrode, an antifuse dielectric, and a second conductor, wherein a first surface of the first electrode is coupled to a first surface of the antifuse dielectric, a second surface of the antifuse dielectric is coupled to a first surface of the second conductor, and the second conductor is electrically coupled to the access transistor'"'"'s source/drain region.

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