×

THROUGH GATE FIN ISOLATION

  • US 20140001572A1
  • Filed: 06/29/2012
  • Published: 01/02/2014
  • Est. Priority Date: 06/29/2012
  • Status: Active Grant
First Claim
Patent Images

1. A microelectronic device, comprising:

  • a first gate electrode disposed over a first semiconductor fin;

    a second gate electrode disposed over a second semiconductor fin,a first isolation region disposed between the first and second gate electrodes and separating adjacent ends of the first and second semiconductor fins,wherein the first electrode, second gate electrode, and first isolation region are substantially parallel with longitudinal centerlines at a substantially equal pitch.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×