IMPROVED SILICIDE FORMATION AND ASSOCIATED DEVICES
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a fin structure disposed over the semiconductor substrate and having spaced source and drain regions extending outwardly from a channel region defined between the source and drain regions;
a gate structure disposed on a portion of the fin structure, the gate structure engaging the fin structure adjacent to the channel region and between the source region and the drain region;
a first silicide layer disposed on the fin structure, the first silicide layer extending outwardly from the gate structure along a top portion of the source region;
a second silicide layer disposed on the fin structure, the second silicide layer extending outwardly from the gate structure along a top portion of the drain region;
a source contact conductively coupled to the first silicide layer and configured to transfer current to the source region; and
a drain contact conductively coupled to the second silicide layer and configured to transfer current away from the drain region.
1 Assignment
0 Petitions
Accused Products
Abstract
Improved silicide formation and associated devices are disclosed. An exemplary semiconductor device includes a semiconductor substrate, a fin structure disposed over the semiconductor substrate and having spaced source and drain regions extending outwardly from a channel region, and a gate structure disposed on a portion of the fin structure, the gate structure engaging the fin structure adjacent to the channel region. The device also includes a first silicide layer disposed on the fin structure, the first silicide layer extending outwardly from the gate structure along a top portion of the source region and a second silicide layer disposed on the fin structure, the second silicide layer extending outwardly from the gate structure along a top portion of the drain region. Further, the device includes a source contact conductively coupled to the first silicide layer and a drain contact conductively coupled to the second silicide layer.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a fin structure disposed over the semiconductor substrate and having spaced source and drain regions extending outwardly from a channel region defined between the source and drain regions; a gate structure disposed on a portion of the fin structure, the gate structure engaging the fin structure adjacent to the channel region and between the source region and the drain region; a first silicide layer disposed on the fin structure, the first silicide layer extending outwardly from the gate structure along a top portion of the source region; a second silicide layer disposed on the fin structure, the second silicide layer extending outwardly from the gate structure along a top portion of the drain region; a source contact conductively coupled to the first silicide layer and configured to transfer current to the source region; and a drain contact conductively coupled to the second silicide layer and configured to transfer current away from the drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a semiconductor substrate; a fin-like field effect transistor (FinFET) that includes a fin structure and a gate structure, the fin structure extending upwardly from the semiconductor substrate and including a channel region interposed between spaced source and drain regions, and the gate structure engaging the fin structure adjacent the channel region, the gate structure including; a high-k dielectric material disposed over the channel region; an opening over the high-k dielectric material and the first channel region; and a metal gate electrode disposed in the opening; a first silicide layer disposed on the fin structure, the first silicide layer extending outwardly from the gate structure along a top portion of the source region; a second silicide layer disposed on the fin structure, the second silicide layer extending outwardly from the gate structure along a top portion of the drain region; a source contact conductively coupled to the first silicide layer and configured to transfer current to the source region; and a drain contact conductively coupled to the second silicide layer and configured to transfer current away from the drain region. - View Dependent Claims (9, 10, 11, 12)
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13. A semiconductor device, comprising:
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a semiconductor substrate having first and second trenches formed therein, the first and second trenches being spaced apart so as to form a fin structure extending upwardly from the substrate, the fin structure having spaced spaced source and drain regions and a channel region defined therebetween; respective first and second isolation features partially filling the first and second trenches and surrounding a bottom portion of the fin structure; a gate structure engaging three surfaces of the fin structure adjacent to the channel region; a first silicide layer disposed on the fin structure, the first silicide layer extending outwardly from the gate structure along a top portion of the source region; a second silicide layer disposed on the fin structure, the second silicide layer extending outwardly from the gate structure along a top portion of the drain region; a source contact conductively coupled to the first silicide layer and configured to transfer current to the source region; and a drain contact conductively coupled to the second silicide layer and configured to transfer current away from the drain region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification