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LATERAL ELECTROCHEMICAL ETCHING OF III-NITRIDE MATERIALS FOR MICROFABRICATION

  • US 20140003458A1
  • Filed: 06/20/2013
  • Published: 01/02/2014
  • Est. Priority Date: 06/28/2012
  • Status: Active Grant
First Claim
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1. A method for laterally etching III-nitride material, the method comprising:

  • depositing a first layer of III-nitride material having a first conductivity on a substrate;

    depositing a second layer of material over the first layer;

    forming a via in the second layer to expose a surface area of the first layer;

    electrochemically and laterally etching at least a portion of the first layer using a hydrofluoric-based etchant, wherein the portion of the first layer undercuts the second layer.

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