RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

• US 20140004465A1
• Filed: 03/08/2012
• Published: 01/02/2014
• Est. Priority Date: 03/15/2011
• Status: Active Grant

• Current Assignee: Nissan Chemical Industries Limited (Nissan Chemical Corporation)
• Original Assignee: Nissan Chemical Industries Limited (Nissan Chemical Corporation)
• Inventors: Ohnishi, Ryuji, Endo, Takafumi, Sakamoto, Rikimaru
• Granted Patent: US 8,962,234 B2
• Time in Patent Office: Days
• US Class Current: 430/296
• CPC Class Codes: C08G 59/1455 Monocarboxylic acids, anhydrides, halides, or low-molecular-weight esters thereof
• CPC Class Codes: C08G 59/4223 aromatic
• CPC Class Codes: G03F 7/09 characterised by structural details, e.g. supports, auxiliary layers supports for printing plates in general B41N
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence

Abstract

A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent:

(where R₁, R₂, and R₃ are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R₁, R₂, and R₃ is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).

Claims

1. A resist underlayer film forming composition for lithography, comprising:

a polymer including a structure of formula (1) below at a terminal of a polymer chain;

a cross-linking agent;

a compound that promotes a cross-linking reaction; and

an organic solvent;

2. The resist underlayer film forming composition for lithography according to claim 1, wherein the hydrocarbon group is a tert-butyl group or an iso-propyl group.

3. The resist underlayer film forming composition for lithography according to claim 1, wherein the polymer includes structural units of formulae (2) and (3):

4. The resist underlayer film forming composition for lithography according to claim 3, wherein the structural unit of formula (2) is a structural unit of formula (2′

);

5. The resist underlayer film forming composition for lithography according to claim 3, wherein the structural unit of formula (3) is a structural unit of formula (3′

);

6. The resist underlayer film forming composition for lithography according to claim 3, wherein the polymer is a polymer of formula (4):

7. The resist underlayer film fanning composition for lithography according to claim 1, further comprising an acid generator.

8. The resist underlayer film forming composition for lithography according to claim 1, wherein the weight-average molecular weight of the polymer is 1000 to 100000.

9. A method for forming a resist pattern, the method comprising:

applying the resist underlayer film forming composition for lithography as claimed in claim 1 onto a semiconductor substrate to be baked and forming a resist underlayer film having a thickness of 1 nm to 20 nm;

forming a resist film on the resist underlayer film;

exposing the semiconductor substrate coated with the resist underlayer film and the resist film to radiation selected from the group consisting of a KrF excimer laser, an ArF excimer laser, extreme ultraviolet rays, and electron beams; and

performing development with an alkaline liquid developer after the exposing.