METHODS AND SYSTEMS FOR CHARACTERIZING AND IDENTIFYING ELECTRONIC DEVICES

• US 20140005967A1
• Filed: 06/28/2013
• Published: 01/02/2014
• Est. Priority Date: 06/29/2012
• Status: Abandoned Application

• Current Assignee: University Of Massachusetts
• Original Assignee: University Of Massachusetts
• Inventors: Fu, Kevin E., Holcomb, Daniel E., Burleson, Wayne P.
• Application Number:
  US13/930,855
• Publication Number:
  US 20140005967A1
• Time in Patent Office: Days
• US Class Current: 702/80
• CPC Class Codes: G06F 11/30 Monitoring
• CPC Class Codes: G11C 11/41 forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
• CPC Class Codes: G11C 11/417 for memory cells of the field-effect type
• CPC Class Codes: G11C 2029/4402 Internal storage of test result, quality data, chip identification, repair information
• CPC Class Codes: G11C 2029/5002 Characteristic
• CPC Class Codes: G11C 29/50016 of retention
• CPC Class Codes: G11C 8/12 Group selection circuits, e.g. for memory block selection, chip selection, array selection

Abstract

The present disclosure provides a method and a system for characterizing and identifying an electronic device using a physical fingerprint. In one aspect, the characterizing method includes determining the physical fingerprint of a test device using selected memory cells of an SRAM array in the test device, and storing data associated with the physical fingerprint in a database. The physical fingerprint of the test device includes data retention voltages respectfully corresponding to the selected memory cells. In one aspect, the identifying method includes characterizing a test device using data retention voltages of selected memory cells in the test device as a physical fingerprint of the test device, and comparing the physical fingerprint of the test device with a predetermined fingerprint of a target device.

Claims

1. A method for characterizing an electronic device, comprising:

determining a physical fingerprint of an electronic device comprising a static random access memory (SRAM) array, using selected memory cells of the SRAM array, wherein the physical fingerprint comprises data retention voltages respectively corresponding to the selected memory cells; and

storing data associated with the physical fingerprint in a database.

2. The method of claim 1, wherein determining the physical fingerprint comprises determining a data retention voltage for each of the selected memory cells.

3. The method of claim 2, wherein determining the data retention voltage comprises:

(3-1) writing a binary state in a first memory cell of the selected memory cells;

(3-2) applying a test voltage to a supply node of the first memory cell; and

(3-3) determining, after a predetermined wait time, whether a data retention failure occurs in the first memory cell.

4. The method of claim 3, further comprising, if the data retention failure does not occur, reducing the test voltage by a predetermined step voltage, and repeating steps (3-1), (3-2), and (3-3) until the data retention failure occurs.

5. The method of claim 4, wherein the test voltage ranges from about 300 mV to about 20 mV, and the predetermined step voltage ranges from about 10 mV to about 140 mV.

6. The method of claim 3, further comprising, if the data retention failure occurs, outputting the test voltage as the data retention voltage of the first memory cell.

7. The method of claim 3, wherein step (3-1) comprises writing the binary state in a non-volatile memory cell.

8. The method of claim 7, wherein step (3-3) comprises:

reading, after the predetermined wait time, a logic state in the first memory cell;

comparing the logic state in the first memory cell with the binary state in the non-volatile memory cell; and

determining that the data retention failure occurs, if the logic state in the first memory cell differs from the binary state in the non-volatile memory cell.

9. The method of claim 3, wherein the predetermined wait time ranges from about 2 ms to about 5 s.

10. The method of claim 3, wherein the binary state comprises a ZERO state and a ONE state.

11. The method of claim 10, wherein the physical fingerprint comprises voltage pairs respectively corresponding to the selected memory cells.

12. The method of claim 11, wherein selected one of the voltage pairs comprises a data retention voltage of a corresponding one of the selected memory cells at the ZERO state and a data retention voltage of the corresponding one of the selected memory cells at the ONE state.

13. The method of claim 1, wherein each of the selected memory cells comprises cross-coupled inverters.

14. The method of claim 1, wherein each of the selected memory cells comprises a supply node for receiving power, the supply node being coupled to a power-gating device.

41. A system for characterizing an electronic device, comprising a processor and computer readable media having computer readable code embodied therein, the computer readable code being executed in the processor to perform the method of claim 1.

15. A method for identifying an electronic device, comprising:

characterizing a test device comprising a static random access memory (SRAM) array, wherein selected memory cells of the SRAM array respectfully comprises data retention voltages corresponding to a physical fingerprint of the test device; and

comparing the physical fingerprint with a predetermined fingerprint stored in a database to determine whether the physical fingerprint and the predetermined fingerprint are within-class or between-class, wherein the predetermined fingerprint is associated with a target device to be identified.

16. The method of claim 15, wherein the predetermined fingerprint comprises first data retention voltage pairs respectively corresponding to selected memory cells in the target device to be identified, and wherein the physical fingerprint comprises second data retention voltage pairs respectively corresponding to the selected memory cells in the test device.

17. The method of claim 16, wherein selected one of the first data retention voltage pairs comprises a data retention voltage of a ZERO state in a corresponding one of the selected memory cells, and a data retention voltage of a ONE state in the corresponding one of the selected memory cells.

18. The method of claim 16, wherein selected one of the second data retention voltage pairs comprises a data retention voltage of a ZERO state in a corresponding one of the selected memory cells, and a data retention voltage of a ONE state in the corresponding one of the selected memory cells.

19. The method of claim 16, wherein comparing the physical fingerprint with the predetermined fingerprint comprises:

calculating a distance between the first data retention voltage pairs associated with the physical fingerprint and the second data retention voltage pairs associated with the predetermined fingerprint.

20. The method of claim 19, wherein if the distance is less than a predetermined value, the physical fingerprint and the predetermined fingerprint are within-class, and the test device is identified as the target device.

21. The method of claim 19, wherein, if the distance is greater than or equal to a predetermined value, the physical fingerprint and the predetermined fingerprint are between-class, and the test device is not identified as the target device.

22. The method of claim 19, wherein calculating the distance comprises:

respectively subtracting the first data retention voltage pairs from the second data retention voltage pairs to obtain voltage difference pairs;

respectively squaring elements of the voltage difference pairs to obtain voltage difference squares; and

summing the voltage difference squares to obtain a value representing the distance.

23. The method of claim 20, wherein the predetermined value is about 0.1 distance unit.

24. The method of claim 15, wherein the physical fingerprint and the predetermined fingerprint are within-class, if the physical fingerprint and the predetermined fingerprint are generated from identical sets of memory cells in an identical device.

25. A system for characterizing an electronic device, comprising:

a processor;

memory coupled to the processor for storing a database; and

a measurement subsystem configured to;

determine a physical fingerprint of an electronic device comprising a static random access memory (SRAM) array, using selected memory cells of the SRAM array, wherein the physical fingerprint comprises data retention voltages respectfully corresponding to the selected memory cells; and

storing data associated with the physical fingerprint in the database.

26. The system of claim 25, wherein the measurement subsystem is further configured to determine a data retention voltage for each of the selected memory cells.

27. The system of claim 26, wherein the measurement subsystem is further configured to:

(3-1) write a binary state in a first memory cell of the selected memory cells;

(3-2) apply a test voltage to a supply node of the first memory cell; and

(3-3) determine, after a predetermined wait time, whether a data retention failure occurs in the first memory cell.

28. The system of claim 27, wherein the measurement subsystem is further configured to, if the data retention failure does not occur, reduce the test voltage by a predetermined step voltage, and repeat (3-1), (3-2), and (3-3) until the data retention failure occurs.

29. The system of claim 28, wherein the test voltage ranges from about 300 mV to about 20 mV, and the predetermined step voltage ranges from about 10 mV to about 140 mV.

30. The system of claim 27, wherein the measurement subsystem further configured to, if the data retention failure occurs, outputting the test voltage as the data retention voltage of the first memory cell.

31. The system of claim 30, wherein (3-3) of the measurement subsystem is further configured to:

read, after the predetermined wait time, a logic state in the first memory cell;

compare the logic state in the first memory cell with the binary state in the non-volatile memory cell; and

determine that the data retention failure occurs, if the logic state in the first memory cell differs from the binary state in the non-volatile memory cell.

32. The system of claim 27, wherein the predetermined wait time ranges from about 2 ms to about 5 s.

42. A system for identifying an electronic device, comprising a processor and computer readable media having computer readable code embodied therein, the computer readable code being executed in the processor to perform the method of claim 25.

33. A system for identifying an electronic device, comprising:

a processor;

memory coupled to the processor for storing a database;

a measurement subsystem configured to characterizing a test device comprising a static random access memory (SRAM) array, wherein selected memory cells of the SRAM array respectfully comprises data retention voltages corresponding to a physical fingerprint of the test device; and

an analysis subsystem configured to compare the physical fingerprint with a predetermined fingerprint stored in the database to determine whether the physical fingerprint and the predetermined fingerprint are within-class or between-class, wherein the predetermined fingerprint is associated with a target device to be identified.

34. The system of claim 33, wherein the predetermined fingerprint comprises first data retention voltage pairs respectively corresponding to selected memory cells in the target device to be identified, and wherein the physical fingerprint comprises second data retention voltage pairs respectively corresponding to the selected memory cells in the test device.

35. The system of claim 34, wherein selected one of the first data retention voltage pairs comprises a data retention voltage of a ZERO state in a corresponding one of the selected memory cells, and a data retention voltage of a ONE state in the corresponding one of the selected memory cells.

36. The system of claim 34, wherein selected one of the second data retention voltage pairs comprises a data retention voltage of a ZERO state in a corresponding one of the selected memory cells, and a data retention voltage of a ONE state in the corresponding one of the selected memory cells.

37. The system of claim 34, wherein the analysis subsystem is further configured to calculate a distance between the first data retention voltage pairs associated with the physical fingerprint and the second data retention voltage pairs associated with the predetermined fingerprint.

38. The system of claim 37, wherein if the distance is less than a predetermined value, the physical fingerprint and the predetermined fingerprint are within-class, and the test device is identified as the target device;

and wherein, if the distance is greater than or equal to the predetermined value, the physical fingerprint and the predetermined fingerprint are between-class, and the test device is not identified as the target device.

39. The system of claim 37, wherein the analysis subsystem is further configured to:

respectively subtract the first data retention voltage pairs from the second data retention voltage pairs to obtain voltage difference pairs;

respectively square elements of the voltage difference pairs to obtain voltage difference squares; and

sum the voltage difference squares to obtain a value representing the distance.

40. The system of claim 38, wherein the predetermined value is about 0.1 distance unit.