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LIGHT EMITTING DIODE

  • US 20140008677A1
  • Filed: 12/28/2012
  • Published: 01/09/2014
  • Est. Priority Date: 06/07/2012
  • Status: Active Grant
First Claim
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1. A light emitting diode comprising:

  • a source layer comprising a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series, wherein the first semiconductor layer comprises a first surface and a second surface opposite to the first surface, and the active layer and the second semiconductor layer are stacked on the second surface in series;

    a first electrode covering and contacting the first surface of the first semiconductor layer;

    a second electrode electrically connected with the second semiconductor layer;

    a metallic plasma generating layer disposed on a surface of the second semiconductor layer away from the first semiconductor layer; and

    a first optical symmetric layer disposed on a surface of the metallic plasma generating layer away from the first semiconductor layer, wherein a refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3.

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