MAGNETIC TUNNELING JUNCTION SEED, CAPPING, AND SPACER LAYER MATERIALS

• US 20140008742A1
• Filed: 06/07/2012
• Published: 01/09/2014
• Est. Priority Date: 08/10/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Chen, Eugene Youjun, Tang, Xueti
• Granted Patent: US 8,779,538 B2
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 41/307 insulating or semiconductive spacer
• CPC Class Codes: H01F 41/34 in patterns, e.g. by lithography
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

Claims

1. A magnetic element for a semiconductor device, comprising:

a first reference layer;

a free layer; and

a first nonmagnetic spacer layer disposed between the first reference layer and the free layer;

wherein the first nonmagnetic spacer layer comprises a binary, ternary, or multi-nary alloy oxide material,

where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements selected from the group consisting of;

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

2. The magnetic element of claim 1 wherein the first nonmagnetic spacer layer is an insulating tunneling barrier layer.

3. The magnetic element of claim 1 wherein the first nonmagnetic spacer layer comprises a conductive material to function as a spin valve.

4. The magnetic element of claim 1, further comprising a capping layer arranged over the first reference layer, said capping layer comprising a binary, ternary, or multi-nary alloy oxide material, where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements selected from the group consisting of:

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

5. The magnetic element of claim 1, further comprising a seed layer arranged beneath the first reference layer, said seed layer comprising a binary, ternary, or multi-nary alloy oxide material, where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements selected from the group consisting of:

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

6. The magnetic element of claim 1 wherein the first nonmagnetic spacer layer comprises a (001) crystal structure.

7. The magnetic element of claim 1, further comprising a second reference layer arranged on an opposite side of the free layer, and a second nonmagnetic spacer layer arranged between the second reference layer and the free layer.

8. The magnetic element of claim 7 wherein the second nonmagnetic spacer layer comprises MgO.

9. The magnetic element of claim 7, wherein the free layer and the second reference layer have an in-plane magnetic orientation and the first reference layer has a perpendicular magnetic orientation.

10. The magnetic element of claim 7, wherein the free layer and the second reference layer have a perpendicular magnetic orientation and the first reference layer has an in-plane magnetic orientation.

11. The magnetic element of claim 7, further comprising a capping layer overlying the first reference layer, wherein the free layer and the second reference layer have an in-plane magnetic orientation and the first reference layer has a perpendicular magnetic orientation.

12. The magnetic element of claim 7, wherein the first reference layer is disposed below the second reference layer, and wherein the free layer and the second reference layer have a perpendicular magnetic orientation and the first reference layer has an in-plane magnetic orientation.

13. The magnetic element of claim 7 further comprising:

a capping layer arranged above the first reference layer; and

a seed layer arranged below the second reference layer;

wherein the capping layer, the seed layer, or both are formed from a binary, ternary, or multi-nary alloy oxide material having a crystal structure that closely matches an adjacent one of the first and second reference layers, where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements selected from the group consisting of;

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

14. A magnetic element comprising:

a reference layer;

a free layer; and

a nonmagnetic spacer layer disposed between the reference layer and the free layer;

a capping layer arranged above the reference layer;

and a seed layer arranged below the reference layer,

wherein at least one of the nonmagnetic spacer layer, the capping layer, or the seed layer comprises MgAl₂O₄, (Mg, Ca, Sr, Ba, Mg)SnO₃, Mg₂SnO₄, or NiMn₂O₄.

15. A magnetic element for a semiconductor device, comprising:

a reference layer;

a free layer; and

a nonmagnetic spacer layer disposed between the reference layer and the free layer;

wherein the nonmagnetic spacer layer comprises a binary, ternary, or multi-nary alloy oxide material,

where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements A, wherein A is selected from the group consisting of;

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh,

wherein the binary alloy oxide material comprises Mg_xA_yO_z where x+y>

1 and z<

1.

16. A magnetic element comprising:

a free layer having a magnetization direction that can be switched from one direction to an opposite direction;

a reference layer;

a spacer layer arranged between the free layer and the reference layer; and

a seed layer or a capping layer arranged adjacent to the reference layer or the free layer, wherein the seed layer or capping layer comprises a binary, ternary, or multi-nary alloy oxide material having one or more additional elements and a crystal structure that closely matches a crystal structure of the adjacent reference layer or free layer,

wherein the one or more additional elements are selected from the group consisting of;

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh.

17. The magnetic element of claim 16, wherein the binary, ternary, or multi-nary alloy oxide material comprises Mg, O, and one or more additional elements to reduce the resistance of the oxide material as compared to MgO.

18. The magnetic element of claim 16, wherein the spacer layer is a tunneling barrier layer.

19. The magnetic element of claim 18, wherein the tunneling barrier layer comprises a binary, ternary, or multi-nary alloy oxide material having a crystal structure that closely matches crystal structures of the adjacent free layer and reference layer.

20. The magnetic memory storage element of claim 16, wherein the magnetic memory storage element provides a spin valve structure.

21. A magnetic element for a semiconductor device, comprising:

a reference layer;

a free layer; and

a nonmagnetic spacer layer disposed between the reference layer and the free layer; and

a seed layer arranged beneath the reference layer,

wherein at least one of the nonmagnetic spacer layer or the seed layer comprises a binary, ternary, or multi-nary alloy oxide material,

where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements A, wherein A is selected from the group consisting of;

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh,

wherein the binary alloy oxide material comprises Mg_xA_yO_z where x+y+z=1, x>

y and 0<

x, or y, or z<

1,

wherein the ternary alloy oxide comprises Mg_xA¹_y1A²_y2O_z where x+y1+y2+z=1, x>

y1+y2 and 0<

x, or y1, or y2, or z<

1, and

wherein the multi-nary alloy oxide comprises Mg_xA¹_y1A_y2 . . . Aⁿ_ynO_z where x+y1+y2+ . . . +yn+z=1, x>

y1+y2+ . . . +yn and 0<

x, or y1, or y2, . . . , or yn, or z<

1.

22. A magnetic element for a semiconductor device, comprising:

a reference layer;

a free layer; and

a nonmagnetic spacer layer disposed between the reference layer and the free layer; and

a capping layer overlying the free layer; and

wherein at least one of the nonmagnetic spacer layer or the capping layer comprises a binary, ternary, or multi-nary alloy oxide material,

where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements A, wherein A is selected from the group consisting of;

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh,

wherein the binary alloy oxide material comprises Mg_xA_yO_z where x+y+z=1, x>

y and 0<

x, or y, or z<

1,

wherein the ternary alloy oxide comprises Mg_xA¹_y1A²_y2O_z where x+y1+y2+z=1, x>

y1+y2 and 0<

x, or y1, or y2, or z<

1, and

wherein the multi-nary alloy oxide comprises Mg_xA¹_y1A²_y2 . . . A_ynO_z where x+y1+y2+ . . . +yn+z=1, x>

y1+y1+ . . . +yn and 0<

x, or y1, or y2, . . . , or yn, or z<

1.

23. A magnetic element comprising:

a reference layer;

a free layer; and

a nonmagnetic spacer layer disposed between the reference layer and the free layer; and

a capping layer overlying the free layer; and

a seed layer arranged below the reference layer,

wherein at least one of the nonmagnetic spacer layer, the capping layer or the seed layer comprises a binary, ternary, or multi-nary alloy oxide material,

where the binary, ternary, or multi-nary alloy oxide material comprises MgO having one or more additional elements A, wherein A is selected from the group consisting of;

Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh,

wherein the binary alloy oxide material comprises Mg_xA_yO_z where x+y+z=1, x>

y and 0<

x, or y, or z<

1,

wherein the ternary alloy oxide comprises Mg_xA¹_y1A²_y2O_z where x+y1+y2+z=1, x>

y1+y2 and 0<

x, or y1, or y2, or z<

1, and

wherein the multi-nary alloy oxide comprises Mg_xA¹_y1A²_y2 . . . Aⁿ_ynO_z where x+y1+y2+ . . . +yn+z=1, x>

y1+y2+ . . . +yn and 0<

x, or y1, or y2, . . . , or yn, or z<

1.

24. (canceled)

25. (canceled)

26. (canceled)

28. (canceled)

29. (canceled)