RADIATION DETECTION APPARATUS AND METHOD OF MANUFACTURING THE SAME

• US 20140008749A1
• Filed: 06/26/2013
• Published: 01/09/2014
• Est. Priority Date: 07/04/2012
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Nomura, Keiichi, Nagano, Kazumi, Okada, Satoshi, Ishida, Yohei, Saruta, Shoshiro, Sasaki, Yoshito, Ichimura, Tomoaki
• Granted Patent: US 9,054,012 B2
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of manufacturing a radiation detection apparatus is provided. On a sensor substrate on which a pixel array is formed, a scintillator layer that covers the pixel array, a sealing layer that covers a side face of the scintillator layer, and a protection layer that covers an upper face of the scintillator layer and an upper face of the sealing layer are formed. The sensor substrate, the sealing layer, and the protection layer along a side of the pixel array are cut such that a cut surface of the sensor substrate, a cut surface of the sealing layer, and a cut surface of the protection layer are arranged on the same plane.

Claims

1. A method of manufacturing a radiation detection apparatus, comprising:

forming, on a sensor substrate on which a pixel array is formed, a scintillator layer that covers the pixel array, a sealing layer that covers a side face of the scintillator layer, and a protection layer that covers an upper face of the scintillator layer and an upper face of the sealing layer; and

cutting the sensor substrate, the sealing layer, and the protection layer along a side of the pixel array such that a cut surface of the sensor substrate, a cut surface of the sealing layer, and a cut surface of the protection layer are arranged on the same plane.

2. The method according to claim 1,

wherein the sealing layer includes a first portion that covers one or more side faces of the scintillator layer, and a second portion that covers other one or more side faces of the scintillator layer, and

during the cutting, the first portion of the sealing layer is cut.

3. The method according to claim 2,

wherein the second portion of the sealing layer is made of a material having moisture barrier properties that are superior to those of the first portion of the sealing layer.

4. The method according to claim 1, further comprising:

heat-sealing the protection layer toward the sealing layer to form a heat-sealed portion in the protection layer.

5. The method according to claim 4,

wherein during the cutting, the protection layer is cut in the heat-sealed portion.

6. The method according to claim 1,

wherein the forming includes forming a scribe line on the sensor substrate along a side of the pixel array,

the sealing layer is formed on the scribe line, and

the cutting is performed using the scribe line.

7. The method according to claim 1,

wherein the forming includes forming the sealing layer using resin after the scintillator layer is formed using a set of column crystals, and

the resin for forming the sealing layer enters between columns of the set of the column crystals.

8. The method according to claim 1, further comprising:

removing a part of a back face of the sensor substrate such that the thickness of the sensor substrate becomes thinner toward the cut surface of the sensor substrate.

9. The method according to claim 1,

wherein during the forming, a first pixel array and a second pixel array that are adjacent to each other are each formed as the pixel array on the sensor substrate, and one side of the first pixel array faces one side of the second pixel array,

the scintillator layer includes a first scintillator layer that covers the first pixel array and a second scintillator layer that covers the second pixel array,

the sealing layer covers a side face of the first scintillator layer and a side face of the second scintillator layer,

the protection layer covers an upper face of the first scintillator layer, an upper face of the second scintillator layer, and an upper face of the sealing layer, and

during the cutting, the sensor substrate, the sealing layer, and the protection layer are cut at a position between the first pixel array and the second pixel array.

10. The method according to claim 9, further comprising:

before the cutting, cutting the sensor substrate, the sealing layer, and the protection layer along a side of the first pixel array that is adjacent to a side thereof facing the second pixel array.

11. A radiation detection apparatus comprising:

a sensor substrate having a pixel array;

a scintillator layer that covers the pixel array;

a sealing layer that covers a side face of the scintillator layer; and

a protection layer that covers an upper face of the scintillator layer and an upper face of the sealing layer,

wherein at least one side face of the sensor substrate is located on the same plane as a side face of the sealing layer and a side face of the protection layer.