METHOD FOR MANUFACTURING THROUGH SUBSTRATE VIA (TSV), STRUCTURE AND CONTROL METHOD OF TSV CAPACITANCE
First Claim
1. A method for manufacturing a through substrate via (TSV), comprising:
- providing a substrate having a first surface and a second surface;
forming a trench in the first surface of the substrate;
filling a low resistance material into the trench;
forming an insulating layer on the first surface of the substrate;
forming at least one opening in the first surface of the substrate, wherein a location of the at least one opening is different from a location of the trench;
forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the at least one opening and on the insulating layer above the first surface;
filling a conductive material into the at least one opening, wherein the at least one opening is used to form at least one via; and
after filling the conductive material into the at least one opening, forming a body contact hole on the first surface of the substrate, wherein a location of the body contact hole is the same as the location of the trench.
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Accused Products
Abstract
A method for manufacturing a through substrate via (TSV) structure, a TSV structure, and a control method of a TSV capacitance are provided. The method for manufacturing the TSV structure includes: providing a substrate having a first surface and a second surface; forming a trench in the first surface of the substrate; filling a low resistance material into the trench; forming an insulating layer on the first surface of the substrate; forming at least one opening in the first surface of the substrate, wherein the opening is located differently the trench; forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the opening and on the insulating layer of the first surface; and filling a conductive material into the opening, wherein the opening is used to form at least one via.
5 Citations
32 Claims
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1. A method for manufacturing a through substrate via (TSV), comprising:
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providing a substrate having a first surface and a second surface; forming a trench in the first surface of the substrate; filling a low resistance material into the trench; forming an insulating layer on the first surface of the substrate; forming at least one opening in the first surface of the substrate, wherein a location of the at least one opening is different from a location of the trench; forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the at least one opening and on the insulating layer above the first surface; filling a conductive material into the at least one opening, wherein the at least one opening is used to form at least one via; and after filling the conductive material into the at least one opening, forming a body contact hole on the first surface of the substrate, wherein a location of the body contact hole is the same as the location of the trench. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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3. (canceled)
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14-24. -24. (canceled)
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25. A TSV structure, comprising:
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a substrate having a first surface and a second surface; an insulating layer located on the first surface of the substrate; a trench located in the first surface of the substrate, wherein a low resistance material is filled in the trench; and a plurality of openings located in the first surface of the substrate, wherein locations of the openings are different from a location of the trench, a conductive material is filled into the openings, and the openings are used to form vias, wherein the trench is located at a geometric center with respect to the openings. - View Dependent Claims (26, 27, 28)
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29. A control method of a TSV capacitance, comprising:
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providing a substrate and a TSV capacitance, wherein the substrate includes a first surface and a second surface, wherein at least one opening is formed in the first surface of the substrate, wherein a conductive material, a conductive seed layer, a barrier layer and an oxide liner layer are disposed from interior to exterior on a sidewall of the at least one opening to form the TSV capacitance, and wherein the at least one opening is used to form at least one via; applying a first voltage to the conductive material of the at least one opening; and applying a second voltage to the substrate to control the TSV capacitance. - View Dependent Claims (30, 31, 32)
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Specification