ADJUSTABLE GATE AND/OR BODY RESISTANCE FOR IMPROVED INTERMODULATION DISTORTION PERFORMANCE OF RADIO-FREQUENCY SWITCH
First Claim
Patent Images
1. A radio-frequency (RF) switch comprising:
- at least one field-effect transistor (FET) disposed between first and second nodes, each of the FET having a respective gate and body; and
an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET.
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Abstract
Radio-frequency (RF) switch circuits are disclosed having adjustable resistance to provide improved switching performance. RF switch circuits include at least one field-effect transistor (FET) disposed between first and second nodes, each of the FET having a respective gate and body. An adjustable-resistance circuit is connected to either or both of the respective gate and body of the FET(s).
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Citations
25 Claims
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1. A radio-frequency (RF) switch comprising:
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at least one field-effect transistor (FET) disposed between first and second nodes, each of the FET having a respective gate and body; and an adjustable-resistance circuit connected to either or both of the respective gate and body of the at least one FET. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for operating a radio-frequency (RF) switch, the method comprising:
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controlling at least one field-effect transistor (FET) disposed between first and second nodes so that each of the at least one FET is in an ON state or an OFF state; and adjusting a resistance of a circuit connected to either or both of a respective gate and body of each of the at least one FET. - View Dependent Claims (14)
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15. (canceled)
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16. (canceled)
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17. (canceled)
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18. (canceled)
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19. (canceled)
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20. A radio-frequency (RF) switch module comprising:
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a packaging substrate configured to receive a plurality of components; a semiconductor die mounted on the packaging substrate, the die including at least one field-effect transistor (FET); and an adjustable-resistance circuit connected to either or both of a respective gate and body of each of the at least one FET. - View Dependent Claims (21, 22, 23, 24)
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25. (canceled)
Specification