P-TYPE OXIDE, P-TYPE OXIDE-PRODUCING COMPOSITION, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE DISPLAY APPARATUS, AND SYSTEM

• US 20140009514A1
• Filed: 03/28/2012
• Published: 01/09/2014
• Est. Priority Date: 03/31/2011
• Status: Active Grant

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Abe, Yukiko, Ueda, Naoyuki, Nakamura, Yuki, Matsumoto, Shinji, Sone, Yuji, Takada, Mikiko, Saotome, Ryoichi
• Granted Patent: US 9,761,673 B2
• Time in Patent Office: Days
• US Class Current: 345/690
• CPC Class Codes: C01F 11/04 by thermal decomposition
• CPC Class Codes: C01F 5/06 by thermal decomposition of magnesium compounds calcining magnesite or dolomite C04B2/10
• CPC Class Codes: C01G 3/02 Oxides; Hydroxides
• CPC Class Codes: C01P 2002/02 Amorphous compounds
• CPC Class Codes: G09G 3/32 semiconductive, e.g. using light-emitting diodes [LED]
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/242 AIBVI or AIBVII compounds, e.g. Cu2O, Cu I H01L29/247 takes precedence
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A p-type oxide which is amorphous and is represented by the following compositional formula: xAO.yCu₂O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu₂O and x and y satisfy the following expressions: 0≦x<100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

Claims

1. A p-type oxide,

wherein the p-type oxide is amorphous and is represented by the following compositional formula:

xAO.yCu₂O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu₂O and x and y satisfy the following expressions;

0≦

x<

100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

2-3. -3. (canceled)

4. A semiconductor device comprising:

an active layer,

wherein the active layer comprises a p-type oxide,

wherein the p-type oxide is amorphous and is represented by the following compositional formula;

xAO.yCu₂O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu₂O and x and y satisfy the following expressions;

0≦

x<

100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

5. The semiconductor device according to claim 4, further comprising:

a first electrode; and

a second electrode,

wherein the semiconductor device is a diode where the active layer is formed between the first electrode and the second electrode.

6. The semiconductor device according to claim 4, further comprising:

a gate electrode configured to apply gate voltage;

a source electrode and a drain electrode which are configured to extract electric current; and

a gate insulating layer,

wherein the semiconductor device is a field effect transistor where the active layer is formed between the source electrode and the drain electrode, and the gate insulating layer is formed between the gate electrode and the active layer.

7. A display device comprising:

a light control device configured to control output of light based on a driving signal; and

a driving circuit containing a semiconductor device and configured to drive the light control device,

wherein the semiconductor device comprises;

an active layer,

wherein the active layer comprises a p-type oxide, and

wherein the p-type oxide is amorphous and is represented by the following compositional formula;

xAO.yCu₂O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu₂O and x and y satisfy the following expressions;

0≦

x<

100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

8. The display device according to claim 7, wherein the light control device comprises an organic electroluminescence device or an electrochromic device.

9. The display device according to claim 7, wherein the light control device comprises a liquid crystal device, an electrophoretic device or an electrowetting device.

10. An image display apparatus comprising:

a plurality of display devices which are arranged in a matrix form and each contain a field effect transistor;

a plurality of wirings configured to individually apply gate voltage and signal voltage to the field effect transistors of the display devices; and

a display control apparatus configured to individually control the gate voltage and the signal voltage in the field effect transistors via the wirings based on image data,

wherein the image display apparatus is configured to display an image based on the image data,

wherein each of the display device comprises;

a light control device configured to control output of light based on a driving signal; and

a driving circuit containing a semiconductor device and configured to drive the light control device,

wherein the semiconductor device comprises;

an active layer,

wherein the active layer comprises a p-type oxide, and

wherein the p-type oxide is amorphous and is represented by the following compositional formula;

xAO.yCu₂O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu₂O and x and y satisfy the following expressions;

0≦

x<

100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.

11. A system comprising:

an image display apparatus; and

an image data generation apparatus configured to generate image data based on image information to be displayed, and output the image data to the image display apparatus,

wherein the image display apparatus comprises;

a plurality of display devices which are arranged in a matrix form and each contain a field effect transistor;

a plurality of wirings configured to individually apply gate voltage and signal voltage to the field effect transistors of the display devices; and

a display control apparatus configured to individually control the gate voltage and the signal voltage in the field effect transistors via the wirings based on image data,

wherein the image display apparatus is configured to display an image based on the image data,

wherein each of the display device comprises;

a light control device configured to control output of light based on a driving signal; and

a driving circuit containing a semiconductor device and configured to drive the light control device,

wherein the semiconductor device comprises;

an active layer,

wherein the active layer comprises a p-type oxide, and

wherein the p-type oxide is amorphous and is represented by the following compositional formula;

xAO.yCu₂O where x denotes a proportion by mole of AO and y denotes a proportion by mole of Cu₂O and x and y satisfy the following expressions;

0≦

x<

100 and x+y=100, and A is any one of Mg, Ca, Sr and Ba, or a mixture containing at least one selected from the group consisting of Mg, Ca, Sr and Ba.