MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD

• US 20140014745A1
• Filed: 07/09/2013
• Published: 01/16/2014
• Est. Priority Date: 10/16/2007
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: BURROWS, Brian H., TAM, Alexander, STEVENS, Ronald, ACHARYA, Sumedh, NIJHAWAN, Sandeep, MYO, Nyi O., CHOI, Kenric T., FELSCH, James David, GRAYSON, Jacob, WASHINGTON, Lori D.
• Granted Patent: US 9,644,267 B2
• Time in Patent Office: Days
• US Class Current: 239/548
• CPC Class Codes: C23C 16/45514 Mixing in close vicinity to the substrate
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: Y10T 137/0318 Processes
• CPC Class Codes: Y10T 137/87153 Plural noncommunicating flow paths

Abstract

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.

Claims

1. A showerhead apparatus comprising:

a plurality of straight and parallel gas flow channels for a first precursor gas; and

a plurality of straight and parallel gas flow channels for a second precursor gas,

wherein the gas flow channels for the first precursor gas are parallel to the gas flow channels for the second precursor gas.

2. The apparatus of claim 1, further comprising a plurality of straight and parallel gas flow channels for an inert gas, wherein the gas flow channels for the inert gas are parallel to the gas flow channels for the first precursor gas and the gas flow channels for the second precursor gas.

3. The apparatus of claim 2, wherein each of the gas flow channels for the inert gas is disposed between one of the gas flow channels for the first precursor gas and one of the gas flow channels for the second precursor gas.

4. The apparatus of claim 1, further comprising:

a plurality of first gas injection holes in fluid communication with the gas flow channels for the first precursor gas;

a plurality of second gas injection holes in fluid communication with the gas flow channels for the second precursor gas; and

mixing channels disposed downstream from said first and said second gas injection holes for mixing the first precursor gas injected through said first gas injection holes and the second precursor gas injected through said second gas injection holes.

5. The apparatus of claim 4, further comprising a plurality of straight and parallel heat exchanging channels extending across the surface of the showerhead, wherein the mixing channels and the heat exchanging channels are parallel and are alternately arranged across the surface of the showerhead.