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SEMICONDUCTOR DEVICE

  • US 20140014948A1
  • Filed: 07/02/2013
  • Published: 01/16/2014
  • Est. Priority Date: 07/12/2012
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a first semiconductor layer and a second semiconductor layer, wherein a transistor comprises the first semiconductor layer;

    an insulating layer over the second semiconductor layer and the transistor; and

    a resin layer over the insulating layer,wherein the second semiconductor layer comprises a first region which is in contact with the insulating layer and a second region which is in contact with the resin layer.

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