SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first semiconductor layer and a second semiconductor layer, wherein a transistor comprises the first semiconductor layer;
an insulating layer over the second semiconductor layer and the transistor; and
a resin layer over the insulating layer,wherein the second semiconductor layer comprises a first region which is in contact with the insulating layer and a second region which is in contact with the resin layer.
1 Assignment
0 Petitions
Accused Products
Abstract
To provide a structure for containing H2O in an oxide semiconductor layer. An insulating layer is provided over a first conductive layer. A first oxide semiconductor layer is provided over the insulating layer. A second oxide semiconductor layer is provided over the insulating layer. A second conductive layer is provided over the first oxide semiconductor layer. A third conductive layer is provided over the first oxide semiconductor layer. An inorganic insulating layer is provided over the second conductive layer and the third conductive layer. A resin layer is provided over the inorganic insulating layer. The first oxide semiconductor layer includes a region overlapping with the first conductive layer. The resin layer is not in contact with the first oxide semiconductor layer. The resin layer includes a portion being in contact with the second oxide semiconductor layer in the inside of a hole of the inorganic insulating layer.
49 Citations
20 Claims
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1. A semiconductor device comprising:
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a first semiconductor layer and a second semiconductor layer, wherein a transistor comprises the first semiconductor layer; an insulating layer over the second semiconductor layer and the transistor; and a resin layer over the insulating layer, wherein the second semiconductor layer comprises a first region which is in contact with the insulating layer and a second region which is in contact with the resin layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first conductive layer over a substrate; a first insulating layer over the first conductive layer; a first oxide semiconductor layer and a second oxide semiconductor layer over the first insulating layer, the first oxide semiconductor layer overlapping with the first conductive layer; a second conductive layer and a third conductive layer which overlap with the first oxide semiconductor layer; a second insulating layer over the second oxide semiconductor layer, the second conductive layer, and the third conductive layer; and a resin layer over the second insulating layer, wherein the second oxide semiconductor layer comprises a first region which is in contact with the second insulating layer and a second region which is in contact with the resin layer. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a first conductive layer over a substrate; a first insulating layer over the first conductive layer; a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer over the first insulating layer, the first oxide semiconductor layer overlapping with the first conductive layer; a second conductive layer and a third conductive layer which overlap with the first oxide semiconductor layer; a second insulating layer over the second oxide semiconductor layer, the third oxide semiconductor layer, the second conductive layer, and the third conductive layer; and a resin layer over the second insulating layer, wherein the second oxide semiconductor layer comprises a first region which is in contact with the second insulating layer and a second region which is in contact with the resin layer, and wherein the third oxide semiconductor layer is located between the first oxide semiconductor layer and the second oxide semiconductor layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification