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SEMICONDUCTOR LIGHT-EMITTING DEVICE

  • US 20140014998A1
  • Filed: 09/16/2013
  • Published: 01/16/2014
  • Est. Priority Date: 04/16/2012
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device comprising:

  • a substrate;

    a first cladding layer formed on the substrate;

    a first guide layer formed on the first cladding layer;

    an active layer formed on the first guide layer;

    a second guide layer formed on the active layer;

    a contact layer formed on the second guide layer;

    a cladding electrode formed on the contact layer, and made of conductive metal oxide; and

    a pad electrode electrically coupled to the cladding electrode, whereinthe semiconductor light-emitting device includes a striped mesa structure including the contact layer,the cladding electrode has a greater width than the mesa structure, andthe cladding electrode covers an upper surface and side surfaces of the mesa structure, and is electrically coupled to the contact layer.

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