FinFET with Trench Field Plate
First Claim
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1. An integrated circuit device, comprising:
- a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type;
a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion;
a gate formed in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion;
a dielectric material formed in the trench on opposing sides of the gate; and
a field plate embedded in the dielectric material on one of the opposing sides of the gate.
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Abstract
An integrated circuit device includes a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type, a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion, a gate formed in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion, an oxide formed in the trench on opposing sides of the gate, and a field plate embedded in the oxide on each of the opposing sides of the gate.
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Citations
20 Claims
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1. An integrated circuit device, comprising:
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a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type; a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion; a gate formed in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion; a dielectric material formed in the trench on opposing sides of the gate; and a field plate embedded in the dielectric material on one of the opposing sides of the gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An integrated circuit device, comprising:
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a substrate; a pad layer supported by the substrate, the pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type; a trench formed in the pad layer, the trench extending through an interface of the body portion and the drift region portion; a gate formed in the trench and over a portion of a top surface of the pad layer, the gate extending along the interface of the body portion and the drift region portion; a dielectric material formed in the trench on opposing sides of the gate; and a field plate material embedded in the dielectric material on both a source side and a drain side of the gate, the field plate material on the drain side of the gate configured to function as a field plate. - View Dependent Claims (14, 15, 16, 17)
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18. A method of forming a fin field effect transistor (FinFET) device, comprising:
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forming a trench in a pad layer having a body portion with a first doping type laterally adjacent to a drift region portion with a second doping type, the trench extending through an interface of the body portion and the drift region portion; forming a gate in the trench and over a top surface of the pad layer along the interface of the body portion and the drift region portion; depositing a dielectric material in the trench on opposing sides of the gate; and embedding a field plate in the dielectric material on one of the opposing sides of the gate. - View Dependent Claims (19, 20)
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Specification