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SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY (STTMRAM) HAVING GRADED SYNTHETIC FREE LAYER

  • US 20140015078A1
  • Filed: 09/16/2013
  • Published: 01/16/2014
  • Est. Priority Date: 07/26/2010
  • Status: Active Grant
First Claim
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1. A spin transfer torque magnetic random access memory (STTMRAM) element comprising:

  • an anti-ferromagnetic layer;

    a magnetic fixed layer structure formed on top of said anti-ferromagnetic layer, said magnetic fixed layer comprising two invariable magnetic sublayers having opposite magnetization directions with an anti-ferromagnetic coupling sublayer interposed therebetween;

    a magnetic free layer separated from said magnetic fixed layer by an insulating tunnel barrier layer, said magnetic free layer comprising;

    a first variable magnetic sublayer formed on top of said insulating tunnel barrier layer;

    a second variable magnetic sublayer formed on top of said first magnetic sublayer; and

    a third variable magnetic sublayer separated from said second variable magnetic sublayer by a coupling sublayer, said coupling sublayer including at least a non-magnetic insulating layer and a non-magnetic conductive layer,wherein said first and second variable magnetic sublayers have substantially the same magnetization direction that is substantially opposite to the magnetization direction of said third variable magnetic sublayer; and

    a capping layer formed on top of said third variable magnetic layer of said magnetic free layer.

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