METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH
First Claim
1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
- forming a hybrid mask above the semiconductor wafer, the hybrid mask comprising a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer;
patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; and
etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.
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Accused Products
Abstract
Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.
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Citations
20 Claims
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1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
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forming a hybrid mask above the semiconductor wafer, the hybrid mask comprising a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer; patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; and etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
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forming a hybrid mask above the semiconductor wafer, the hybrid mask comprising a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer, wherein forming the hybrid mask comprises forming the first water-soluble layer with a thickness less than the thickness of the second water-soluble layer, and forming the first water-soluble layer with a viscosity less than the viscosity of the second water-soluble layer, and wherein the first water-soluble layer is applied with a first spin-on process and then baked and, subsequently, the second water-soluble layer is applied with a second spin-on process and then baked; patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; and etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
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forming a hybrid mask above the semiconductor wafer, the hybrid mask comprising a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer; patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits; etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits; and
, subsequently,removing the patterned hybrid mask by exposing the patterned hybrid mask to an aqueous solution comprising one or more of an alkaline solution, an acidic solution, or deionized water. - View Dependent Claims (18, 19, 20)
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Specification