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SEMICONDUCTOR DEVICE

  • US 20140021637A1
  • Filed: 09/25/2013
  • Published: 01/23/2014
  • Est. Priority Date: 05/18/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a doped zone within the semiconductor substrate;

    a polysilicon layer in a trench electrically isolated from the semiconductor substrate by an insulating layer; and

    an elongate plug structure extending in a lateral direction in or above the semiconductor substrate, the elongate plug structure providing electrical connection between the doped zone and the polysilicon layer.

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