PRIMARY VOLTAIC SOURCES INCLUDING NANOFIBER SCHOTTKY BARRIER ARRAYS AND METHODS OF FORMING SAME

• US 20140021827A1
• Filed: 07/17/2013
• Published: 01/23/2014
• Est. Priority Date: 07/18/2012
• Status: Active Grant

• Current Assignee: Seerstone LLC
• Original Assignee: Seerstone LLC
• Inventors: Noyes, Dallas B.
• Granted Patent: US 9,779,845 B2
• Time in Patent Office: Days
• US Class Current: 310/303
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: G21H 1/06 Cells wherein radiation is applied to the junction of different semiconductor materials
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/66143 Schottky diodes
• CPC Class Codes: Y10S 322/00 Electricity: single generator systems

Abstract

Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive source is positioned proximate to the arrays such that at least a portion of the radioactive particles impinge on the arrays to produce a flow of electrons across the metal-semiconductor junction. Methods of producing voltaic sources include reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate. Material is disposed over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array. A radioactive source is disposed adjacent the nanofiber Schottky barrier array.

Claims

1. A primary voltaic source, comprising:

a nanofiber Schottky barrier array comprising a semiconductor component and a metallic component joined at a metal-semiconductor junction; and

a radioactive source comprising at least one radioactive element configured to emit radioactive particles and positioned proximate to the nanofiber Schottky barrier array such that at least a portion of the radioactive particles impinge on the nanofiber Schottky barrier array to produce a flow of electrons across the metal-semiconductor junction.

2. The primary voltaic source of claim 1, wherein the semiconductor component comprises a semiconductor carbon fiber nanotube and the metallic component comprises a metallic coating over the semiconductor carbon fiber nanotube.

3. The primary voltaic source of claim 1, wherein the metallic component comprises a metallic carbon fiber nanotube and the semiconductor component comprises a semiconductor coating over the metallic carbon fiber nanotube.

4. The primary voltaic source of claim 1, wherein the semiconductor component comprises a semiconductor nanofiber and the metallic component comprises a metallic coating over the semiconductor nanofiber.

5. The primary voltaic source of claim 1, wherein the metallic component comprises a metallic nanofiber and the semiconductor component comprises a semiconductor coating over the metallic nanofiber.

6. The primary voltaic source of claim 1, wherein the nanofiber Schottky barrier array defines a plurality of voids and the radioactive source occupies at least a portion of the voids.

7. The primary voltaic source of claim 6, wherein the nanofiber Schottky barrier array comprises a plurality of nanotubes, and wherein an interior surface of the plurality of nanotubes defines the voids.

8. The primary voltaic source of claim 1, where the radioactive source comprises at least one material selected from the group consisting of gases, liquids, solids, gels, and foams.

9. The primary voltaic source of claim 8, wherein the nanofiber Schottky barrier comprises nanotubes defining interstices, and wherein the radioactive source is disposed within the interstices.

10. The primary voltaic source of claim 1, wherein the nanofiber Schottky barrier array comprises a plurality of nanofibers and a layer of material formed over the plurality of nanofibers, wherein a first end of each nanofiber is secured to a substrate.

11. The primary voltaic source of claim 10, wherein the plurality of nanofibers comprises a first plurality and a second plurality of the nanofibers, wherein the first plurality of nanofibers is secured outwardly from a first side of the substrate and the second plurality of nanofibers is secured outwardly from a second, opposite side of the substrate.

12. The primary voltaic source of claim 10, wherein each nanofiber of the plurality comprises a material of the same type as a material of the substrate, and wherein each nanofiber of the plurality forms an electrically conductive contact site with the substrate.

13. The primary voltaic source of claim 12, wherein the layer of material formed over the plurality of nanofibers forms an electrically conducting continuous layer over at least a portion of each nanofiber of the plurality and over at least a portion of the substrate.

14. The primary voltaic source of claim 10, wherein each nanofiber of the plurality comprises a semiconductor carbon fiber nanotube with a metallic coating.

15. The primary voltaic source of claim 1, wherein:

the nanofiber Schottky barrier array comprises a first plurality of nanofibers secured outwardly from a first substrate and a first layer of material formed over the plurality of nanofibers;

the voltaic source comprises a second nanofiber Schottky barrier array comprising a second plurality of nanofibers secured outwardly from a second substrate and a second layer of material formed over the second plurality of nanofibers; and

a major surface of the second substrate is oriented substantially parallel to a major surface of the first substrate.

16. The primary voltaic source of claim 1, wherein the radioactive source comprises at least one low-energy particle emitter.

17. The voltaic source of claim 16, wherein the at least one low-energy particle emitter is configured to emit particles having an energy of less than about 0.2 MeV.

18. The primary voltaic source of claim 1, wherein the radioactive source comprises at least one material selected from the group consisting of tritium, beryllium-10, carbon-14, silicon-32, phosphorous-32, cobalt-60, krypton-85, strontium-90, cesium-137, promethium-147, americium-241, radium-226, lead-210, polonium-210, radium-228, actinium-227, thorium-228, uranium-234, uranium-235, curium-242, and curium-244.

19. The primary voltaic source of claim 1, wherein the radioactive source comprises tritium and americium-241.

20. The primary voltaic source of claim 1, wherein the radioactive source is integrated with the metallic component of the nanofiber Schottky barrier array.

21. The primary voltaic source of claim 1, wherein the radioactive source is integrated with the semiconductor component of the nanofiber Schottky barrier array.

22. A method for producing a primary voltaic source, comprising:

reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate;

disposing a material over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array comprising a semiconductor component and a metallic component joined at a metal-semiconductor junction; and

disposing a radioactive source adjacent the nanofiber Schottky barrier array such that at least a portion of radioactive particles leaving the radioactive source impinge on the nanofiber Schottky barrier array to produce a flow of electron across the metal-semiconductor junction.

23. The method of claim 22, wherein reacting at least one carbon oxide and a reducing agent comprises reacting carbon dioxide with a reducing agent comprising hydrogen, an alkane, or an alcohol.

24. The method of claim 22, wherein reacting at least one carbon oxide and a reducing agent comprises forming a solid carbon product having semiconductor properties.

25. The method of claim 24, wherein disposing a material over at least a portion of the solid carbon product comprises disposing a metal over the solid carbon product.

26. The method of claim 22, wherein reacting at least one carbon oxide and a reducing agent comprises forming a solid carbon product having metallic properties.

27. The method of claim 26, wherein disposing a material over at least a portion of the solid carbon product comprises disposing a semiconductor material over the solid carbon product.

28. The method of claim 22, wherein disposing a radioactive source adjacent the nanofiber Schottky barrier array comprises disposing at least one material selected from the group consisting of tritium, beryllium-10, carbon-14, silicon-32, phosphorous-32, cobalt-60, krypton-85, strontium-90, cesium-137, promethium-147, americium-241, radium-226, lead-210, polonium-210, radium-228, actinium-227, thorium-228, uranium-234, uranium-235, curium-242, and curium-244 adjacent the nanofiber Schottky barrier array.