PRIMARY VOLTAIC SOURCES INCLUDING NANOFIBER SCHOTTKY BARRIER ARRAYS AND METHODS OF FORMING SAME
First Claim
1. A primary voltaic source, comprising:
- a nanofiber Schottky barrier array comprising a semiconductor component and a metallic component joined at a metal-semiconductor junction; and
a radioactive source comprising at least one radioactive element configured to emit radioactive particles and positioned proximate to the nanofiber Schottky barrier array such that at least a portion of the radioactive particles impinge on the nanofiber Schottky barrier array to produce a flow of electrons across the metal-semiconductor junction.
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Accused Products
Abstract
Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive source is positioned proximate to the arrays such that at least a portion of the radioactive particles impinge on the arrays to produce a flow of electrons across the metal-semiconductor junction. Methods of producing voltaic sources include reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate. Material is disposed over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array. A radioactive source is disposed adjacent the nanofiber Schottky barrier array.
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Citations
28 Claims
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1. A primary voltaic source, comprising:
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a nanofiber Schottky barrier array comprising a semiconductor component and a metallic component joined at a metal-semiconductor junction; and a radioactive source comprising at least one radioactive element configured to emit radioactive particles and positioned proximate to the nanofiber Schottky barrier array such that at least a portion of the radioactive particles impinge on the nanofiber Schottky barrier array to produce a flow of electrons across the metal-semiconductor junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method for producing a primary voltaic source, comprising:
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reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate; disposing a material over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array comprising a semiconductor component and a metallic component joined at a metal-semiconductor junction; and disposing a radioactive source adjacent the nanofiber Schottky barrier array such that at least a portion of radioactive particles leaving the radioactive source impinge on the nanofiber Schottky barrier array to produce a flow of electron across the metal-semiconductor junction. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification